Semiconductor lasers for planar integrated optoelectronics

被引:7
作者
Sargent, EH [1 ]
机构
[1] Univ Toronto, Dept Elect & Comp Engn, Toronto, ON M5S 3G4, Canada
关键词
D O I
10.1016/S0038-1101(99)00221-X
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
We review progress in novel semiconductor lasers positioned to enable planar optoelectronic integration and to facilitate the realization of functional photonic devices. Lateral injection of current into the active region of a semiconductor laser has been pursued, mostly empirically, since the early 1970s. In this work, we focus on recent advances in the development of a device model which accounts for the qualitative structural and operational differences between lateral and conventional vertical injection lasers. We review fabrication methods - both established and emerging - suitable for LCI laser realization. Finally, we report the results of recent combined theoretical-experimental explorations of laser performance. (C) 2000 Elsevier Science Ltd. All rights reserved.
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页码:147 / 173
页数:27
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