Dielectric characterization of Bi3.25La0.75Ti3O12 thin films

被引：66

作者：

Wu, D ^{[1
]}

Li, AD

Ming, NB

机构：

[1] Nanjing Univ, Natl Lab Solid State Microstruct, Nanjing 210093, Peoples R China

[2] Nanjing Univ, Dept Mat Sci & Technol, Nanjing 210093, Peoples R China

来源：

APPLIED PHYSICS LETTERS | 2004年 / 84卷 / 22期

关键词：

D O I：

10.1063/1.1757631

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Dielectric properties of Pt/Bi3.25La0.75Ti3O12(BLaT)/Pt ferroelectric thin film capacitors were studied as functions of frequency (40-10(6) Hz) and temperature (30-590 degreesC). BLaT thin films showed a first-order para-ferroelectric transition around 400 degreesC. Pt/BLaT/Pt capacitors post-annealed in Ar exhibited broadened transition with larger losses, which was interpreted in terms of increased oxygen vacancies. Via complex impedance spectroscopy study, the conduction activation energy of the space charges was determined to be similar to1.1 eV, close to that of oxygen vacancies in perovskite materials. The impedance characteristics of Pt/BLaT/Pt were compared with those of Pt/SrBi2Ta2O9(SBT)/Pt capacitors. The impact of dielectric characteristics on fatigue resistance of BLaT films was briefly discussed in comparison with SBT films. (C) 2004 American Institute of Physics.

引用

页码：4505 / 4507

页数：3

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