Valley splitting in Si/Si1-xGex heterostructures

被引：0

作者：

Balasubramanian, S

Venkataraman, V

机构：

[1] INDIAN INST SCI,DEPT PHYS,BANGALORE 560012,KARNATAKA,INDIA

[2] MADURAI KAMARAJ UNIV,DEPT THEORET PHYS,MADURAI 625021,TAMIL NADU,INDIA

来源：

SOLID STATE COMMUNICATIONS | 1996年 / 100卷 / 07期

关键词：

semiconductors; heterojunctions; electronic states (localized);

D O I：

10.1016/0038-1098(96)00105-6

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

We show that the alloy disorder potential can be a possible cause for the valley splitting observed in the Si/Si1-xGex heterostructures at high magnetic fields and low electron densities. Copyright (C) 1996 Elsevier Science Ltd

引用

页码：525 / 528

页数：4

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