Ferromagnetism and the electronic band structure in (Ga,Mn)(Bi,As) epitaxial layers

被引：15

作者：

Yastrubchak, O. ^{[1
,2
]}

Sadowski, J. ^{[3
,4
]}

Gluba, L. ^{[1
]}

Domagala, J. Z. ^{[4
]}

Rawski, M. ^{[5
]}

Zuk, J. ^{[1
]}

Kulik, M. ^{[1
]}

Andrearczyk, T. ^{[4
]}

Wosinski, T. ^{[4
]}

机构：

[1] Maria Curie Sklodowska Univ Lublin, Inst Phys, PL-20031 Lublin, Poland

[2] Natl Acad Sci Ukraine, Inst Semicond Phys, UA-03028 Kiev, Ukraine

[3] Lund Univ, MAX IV Lab, SE-22100 Lund, Sweden

[4] Polish Acad Sci, Inst Phys, PL-02668 Warsaw, Poland

[5] Maria Curie Sklodowska Univ Lublin, Analyt Lab, PL-20031 Lublin, Poland

来源：

APPLIED PHYSICS LETTERS | 2014年 / 105卷 / 07期

基金：

瑞典研究理事会;

关键词：

PHOTOREFLECTANCE; SEMICONDUCTORS; TEMPERATURE; GAAS;

D O I：

10.1063/1.4893381

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Impact of Bi incorporation into (Ga,Mn)As layers on their electronic-and band-structures as well as their magnetic and structural properties has been studied. Homogenous (Ga,Mn)(Bi,As) layers of high structural perfection have been grown by the low-temperature molecular-beam epitaxy technique. Post-growth annealing treatment of the layers results in an improvement of their structural and magnetic properties and an increase in the hole concentration in the layers. The modulation photoreflectance spectroscopy results are consistent with the valence-band model of hole-mediated ferromagnetism in the layers. This material combines the properties of (Ga,Mn)As and Ga(Bi,As) ternary compounds and offers the possibility of tuning its electrical and magnetic properties by controlling the alloy composition. (C) 2014 AIP Publishing LLC.

引用

页数：5

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