Chemical bath deposition of single crystal SnS nanobelts on glass substrates

被引：25

作者：

Cao, Meng ^{[1
]}

Wu, Chuangsheng ^{[1
]}

Yao, Kefeng ^{[1
]}

Jing, Jiahe ^{[1
]}

Huang, Jian ^{[1
]}

Zhang, Jijun ^{[1
]}

Lai, Jianming ^{[1
]}

Ali, Omar ^{[2
]}

Wang, Linjun ^{[1
]}

Shen, Yue ^{[1
]}

机构：

[1] Shanghai Univ, Sch Mat Sci & Engn, Shanghai, Peoples R China

[2] Univ Baghdad, Dept Phys, Baghdad, Iraq

来源：

MATERIALS RESEARCH BULLETIN | 2018年 / 104卷

基金：

中国国家自然科学基金;

关键词：

Deposition; Thin films; Solar energy materials; Electrical properties; SULFIDE THIN-FILMS; HIGH-PERFORMANCE; OPTICAL-PROPERTIES; SOLAR-CELLS; FABRICATION; PHOTODETECTORS; NANOSHEETS;

D O I：

10.1016/j.materresbull.2018.03.039

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

SnS nanobelt thin films were deposited on glass substrates in acidic solution by chemical bath deposition (CBD) method. The belt-like morphologies of as-deposited SnS thin films were characterized by scanning electron microscope (SEM) and transmission electron microscopy (TEM). X-ray diffraction (XRD) and Raman measurements were carried out to confirm the crystal structures and phase purities of SnS nanobelt thin films. The morphologies and phase purities of SnS thin films were influenced greatly by the tin and sulfur precursors. The bandgaps of SnS nanobelts were determined to be 1.39-1.41 eV by UV-vis absorption and photoluminescence (PL) spectra. Current-voltage ((I-V)) and current-time ((I-T)) characteristics were studied to demonstrate the photoelectric performances of SnS nanobelt thin films.

引用

页码：244 / 249

页数：6

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