Modified pulsed PECVD technique for nano-crystalline silicon solar cells: An effect of I-layer growth temperature

被引：0
|
作者：
Das, UK [1 ]
Centurioni, E [1 ]
Morrison, S [1 ]
Williamson, DL [1 ]
Madan, A [1 ]
机构：
[1] MNSyst Inc, Golden, CO 80401 USA
来源：
PROCEEDINGS OF 3RD WORLD CONFERENCE ON PHOTOVOLTAIC ENERGY CONVERSION, VOLS A-C | 2003年
关键词：
D O I：
暂无
中图分类号：
TE [石油、天然气工业]; TK [能源与动力工程];
学科分类号：
0807 ; 0820 ;
摘要：
The Pulsed PECVD technique allows an increase in the electron density during the 'ON' cycle, while in the 'OFF' cycle it neutralizes the ions responsible for dust formation in the plasma. We have developed a modified Pulsed PECVD technique, which has the inherent ability to reduce powder formation in the plasma and to grow nc-Si:H p-i-n solar cells. An efficiency of similar to7.5% (FF of 0.69) at an i-layer thickness of similar to1.4 mum has been obtained by optimizing the i-layer growth temperature. The 7.5% efficiency device is (220) oriented with I-220/I-111 value of similar to2.0 and exhibits no significant Si-O bonding in FTIR, which yields a hydrogen content of similar to7 at%.
引用
收藏
页码：1780 / 1783
页数：4
相关论文
共 50 条
  • [1] Amorphous/crystalline silicon heterojunction solar cells with varying i-layer thickness
    Page, M. R.
    Iwaniczko, E.
    Xu, Y. -Q.
    Roybal, L.
    Hasoon, F.
    Wang, Q.
    Crandall, R. S.
    THIN SOLID FILMS, 2011, 519 (14) : 4527 - 4530
  • [2] Investigation on sub nano-crystalline silicon thin films grown using pulsed PECVD process
    Sharma, Mansi
    Chaudhary, Deepika
    Sudhakar, S.
    Jadkar, Sandesh
    Kumar, Sushil
    MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING, 2018, 80 : 167 - 173
  • [3] Properties of nano-crystalline silicon films for top solar cells
    Iwasita, Shinya
    Inoue, Toshihisa
    Koga, Kazunorl
    Shiratani, Masaharu
    Nunomura, Shota
    Kondo, Michlo
    CONFERENCE RECORD OF THE 2006 IEEE 4TH WORLD CONFERENCE ON PHOTOVOLTAIC ENERGY CONVERSION, VOLS 1 AND 2, 2006, : 1664 - +
  • [4] Impacts of nano-structures in p- and i-layer on the performances of amorphous silicon solar cells
    Liao, Xianbo
    Du, Wenhui
    Cao, Xinmin
    Yang, Xiesen
    Xiang, Xianbi
    zhang, Shibin
    Fan, Qihua
    Sun, Kai
    Deng, Xunming
    PHYSICA STATUS SOLIDI C - CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 6, NO 3, 2009, 6 (03): : 696 - +
  • [5] Silicon solar cells with nano-crystalline silicon down shifter: experiment and modeling
    Jestin, Yoann
    Pucker, Georg
    Ghulinyan, Mher
    Ferrario, Lorenza
    Bellutti, Pierluigi
    Picciotto, Antonio
    Collini, Amos
    Marconi, Alessandro
    Anopchenko, Aleksei
    Yuan, Zhizhong
    Pavesi, Lorenzo
    NEXT GENERATION (NANO) PHOTONIC AND CELL TECHNOLOGIES FOR SOLAR ENERGY CONVERSION, 2010, 7772
  • [6] Deposition of microcrystalline silicon solar cells via the pulsed PECVD technique
    Das, UK
    Morrison, S
    Madan, A
    JOURNAL OF NON-CRYSTALLINE SOLIDS, 2002, 299 : 79 - 82
  • [7] Amorphous and microcrystalline silicon solar cells grown by pulsed PECVD technique
    Das, UK
    Morrison, S
    Madan, A
    AMORPHOUS AND HETEROGENEOUS SILICON-BASED FILMS-2002, 2002, 715 : 611 - 616
  • [8] Deposition of amorphous silicon solar cells via the pulsed PECVD technique
    Morrison, S
    Madan, A
    CONFERENCE RECORD OF THE TWENTY-EIGHTH IEEE PHOTOVOLTAIC SPECIALISTS CONFERENCE - 2000, 2000, : 928 - 931
  • [9] NANO-CRYSTALLINE SILICON FILMS PRODUCED BY LAYER-BY-LAYER DEPOSITION TECHNIQUE AND THEIR NOVEL PROPERTIES
    CHEN, MR
    CHEN, KJ
    ACTA PHYSICA SINICA-OVERSEAS EDITION, 1994, 3 (04): : 250 - 254
  • [10] Influence of Growth Time and Temperature on Optical Characteristics and Surface Wetting in Nano-Crystalline Graphene Deposited by PECVD Directly on Silicon Dioxide
    Luksa, Algimantas
    Bukauskas, Virginijus
    Nargeliene, Viktorija
    Treideris, Marius
    Talaikis, Martynas
    Selskis, Algirdas
    Suchodolskis, Arturas
    Setkus, Arunas
    CRYSTALS, 2023, 13 (08)
12345