Comparison of Carrier Lifetime Measurements and Mapping in 4H SiC Using Time Resolved Photoluminescence and μ-PCD

被引：3

作者：

Kallinger, Birgit ^{[1
]}

Rommel, Mathias ^{[1
]}

Lilja, Louise ^{[2
]}

ul Hassan, Jawad ^{[2
]}

Booker, Ian ^{[2
]}

Janzen, Erik ^{[2
]}

Bergman, Peder ^{[2
]}

机构：

[1] Fraunhofer IISB, Schottkystr 10, D-91058 Erlangen, Germany

[2] Linkoping Univ, Dept Chem Phys & Biol, E-58153 Linkoping, Sweden

来源：

SILICON CARBIDE AND RELATED MATERIALS 2013, PTS 1 AND 2 | 2014年 / 778-780卷

关键词：

silicon carbide; carrier lifetime; photoluminescence; mu-PCD; DEFECTS; GROWTH; DIODES;

D O I：

10.4028/www.scientific.net/MSF.778-780.301

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

Carrier lifetime measurements and wafer mappings have been done on several different 4H SiC epiwafers to compare two different measurement techniques, time-resolved photoluminescence and microwave induced photoconductivity decay. The absolute values of the decay time differ by a factor of two, as expected from recombination and measurement theory. Variations within each wafer are comparable with the two techniques. Both techniques are shown to be sensitive to substrate quality and distribution of extended defects.

引用

页码：301 / +

页数：2

共 8 条

[1] Crystal defects as source of anomalous forward voltage increase of 4H-SiC diodes [J].

Bergman, JP ;

Lendenmann, H ;

Nilsson, PÅ ;

Lindefelt, U ;

Skytt, P .

SILICON CARBIDE AND RELATED MATERIALS, ECSCRM2000, 2001, 353-356 :299-302

[2] Influence of epilayer thickness and structural defects on the minority carrier lifetime in 4H-SiC [J].

Kallinger, Birgit ;

Berwian, Patrick ;

Friedrich, Jochen ;

Rommel, Mathias ;

Azizi, Maral ;

Hecht, Christian ;

Friedrichs, Peter .

SILICON CARBIDE AND RELATED MATERIALS 2012, 2013, 740-742 :633-+

[3] Carrier lifetime measurement in n- 4H-SiC epilayers [J].

Klein, P. B. .

JOURNAL OF APPLIED PHYSICS, 2008, 103 (03)

[4] High-power SiC diodes: Characteristics, reliability and relation to material defects [J].

Lendenmann, H ;

Dahlquist, F ;

Bergman, JP ;

Bleichner, H ;

Hallin, C .

SILICON CARBIDE AND RELATED MATERIALS 2001, PTS 1 AND 2, PROCEEDINGS, 2002, 389-3 :1259-1264

[5] Influence of Growth Temperature on Carrier Lifetime in 4H-SiC Epilayers [J].

Lilja, Louise ;

ul Hassan, Jawad ;

Booker, Ian ;

Bergman, Peder ;

Janzen, Erik .

SILICON CARBIDE AND RELATED MATERIALS 2012, 2013, 740-742 :637-640

[6] Step-controlled epitaxial growth of SiC: high quality homoepitaxy [J].

Matsunami, H ;

Kimoto, T .

MATERIALS SCIENCE & ENGINEERING R-REPORTS, 1997, 20 (03) :125-166

[7] Fast and slow carrier recombination transients in highly excited 4H-and 3C-SiC crystals at room temperature [J].

Scajev, P. ;

Gudelis, V. ;

Jarasiunas, K. ;

Klein, P. B. .

JOURNAL OF APPLIED PHYSICS, 2010, 108 (02)

[8] Negative-U System of Carbon Vacancy in 4H-SiC [J].

Son, N. T. ;

Trinh, X. T. ;

Lovlie, L. S. ;

Svensson, B. G. ;

Kawahara, K. ;

Suda, J. ;

Kimoto, T. ;

Umeda, T. ;

Isoya, J. ;

Makino, T. ;

Ohshima, T. ;

Janzen, E. .

PHYSICAL REVIEW LETTERS, 2012, 109 (18)

← 1 →