Preparation and Electrical Properties of the Bi0.9La0.1Fe0.9Mn0.1O3/SrTiO3:Nb p-n Heterojunctions

被引：1
|
作者：
Vengalis, Bonifacas [1 ]
Devenson, Jelena [1 ]
Oginskis, Antanas K. [1 ]
Lisauskas, Vaclovas [1 ]
Dapkus, Leonas [1 ]
Maneikis, Andrius [1 ]
机构：
[1] Lithuania Acad Sci, Inst Semicond Phys, LT-01108 Vilnius, Lithuania
来源：
FERROELECTRICS | 2009年 / 379卷
关键词：
Multiferoics; Bi0.9La0.1Fe0.9Mn0.1O3 thin films; p-n heterostructures; electrical properties;
D O I：
10.1080/00150190902851952
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
We report synthesis of single phase highly [100]-axis oriented Bi0.9La0.1Fe0.9Mn0.1O3 (BLFMO) thin films grown by RF sputtering at 650-750 degrees C under Ar/O-2 (1:1) gas pressure. The current-voltage characteristics of the p-n heterostructures prepared by growing the BLFMO films on highly conductive 0.7 weight % Nb-doped SrTiO3(100) (STON) have been investigated. The current-voltage dependencies in a case of a forward bias have been modeled taking into account linear current-voltage relationship caused by space charge-limited current at low bias voltages, as well as major contribution of Shottky emission and current limiting effect by series resistance at higher forward bias voltages.
引用
收藏
页码：360 / 367
页数：8
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