Evaluation of minority carrier diffusion length of undoped n-BaSi2 epitaxial thin films on Si(001) substrates by electron-beam-induced-current technique

被引：31

作者：

Baba, Masakazu ^{[1
]}

Watanabe, Kentaro ^{[1
,2
]}

Hara, Kosuke O. ^{[3
]}

Toko, Kaoru ^{[1
]}

Sekiguchi, Takashi ^{[2
]}

Usami, Noritaka ^{[3
,4
]}

Suemasu, Takashi ^{[1
,4
]}

机构：

[1] Univ Tsukuba, Inst Appl Phys, Tsukuba, Ibaraki 3058573, Japan

[2] Natl Inst Mat Sci, Tsukuba, Ibaraki 3050044, Japan

[3] Nagoya Univ, Grad Sch Engn, Nagoya, Aichi 4648603, Japan

[4] Japan Sci & Technol Agcy, CREST, Chiyoda Ku, Tokyo 1020075, Japan

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS | 2014年 / 53卷 / 07期

基金：

日本科学技术振兴机构;

关键词：

GRAIN-BOUNDARIES; BASI2; SILICON; GROWTH;

D O I：

10.7567/JJAP.53.078004

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We have grown a 400-nm-thick undoped n-BaSi2 epitaxial film on an n-Si(001) substrate by molecular beam epitaxy, and evaluated the diffusion length of minority carriers (holes) by an electron-beam-induced-current (EBIC) technique in the edge-scan configuration. The EBIC line-scan profile showed an exponential dependence on the distance from the tungsten probe. The diffusion length of minority carriers in the n-BaSi2 film was found to be approximately 1.5 mu m. This value is much smaller than that in undoped n-BaSi2 on Si(111). (C) 2014 The Japan Society of Applied Physics

引用

页数：3

共 31 条

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