Evaluation of minority carrier diffusion length of undoped n-BaSi2 epitaxial thin films on Si(001) substrates by electron-beam-induced-current technique

被引：31
作者：
Baba, Masakazu [1 ]
Watanabe, Kentaro [1 ,2 ]
Hara, Kosuke O. [3 ]
Toko, Kaoru [1 ]
Sekiguchi, Takashi [2 ]
Usami, Noritaka [3 ,4 ]
Suemasu, Takashi [1 ,4 ]
机构：
[1] Univ Tsukuba, Inst Appl Phys, Tsukuba, Ibaraki 3058573, Japan
[2] Natl Inst Mat Sci, Tsukuba, Ibaraki 3050044, Japan
[3] Nagoya Univ, Grad Sch Engn, Nagoya, Aichi 4648603, Japan
[4] Japan Sci & Technol Agcy, CREST, Chiyoda Ku, Tokyo 1020075, Japan
来源：
JAPANESE JOURNAL OF APPLIED PHYSICS | 2014年 / 53卷 / 07期
基金：
日本科学技术振兴机构;
关键词：
GRAIN-BOUNDARIES; BASI2; SILICON; GROWTH;
D O I：
10.7567/JJAP.53.078004
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
We have grown a 400-nm-thick undoped n-BaSi2 epitaxial film on an n-Si(001) substrate by molecular beam epitaxy, and evaluated the diffusion length of minority carriers (holes) by an electron-beam-induced-current (EBIC) technique in the edge-scan configuration. The EBIC line-scan profile showed an exponential dependence on the distance from the tungsten probe. The diffusion length of minority carriers in the n-BaSi2 film was found to be approximately 1.5 mu m. This value is much smaller than that in undoped n-BaSi2 on Si(111). (C) 2014 The Japan Society of Applied Physics
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