Evaluation of minority carrier diffusion length of undoped n-BaSi2 epitaxial thin films on Si(001) substrates by electron-beam-induced-current technique

被引：31

作者：

Baba, Masakazu ^{[1
]}

Watanabe, Kentaro ^{[1
,2
]}

Hara, Kosuke O. ^{[3
]}

Toko, Kaoru ^{[1
]}

Sekiguchi, Takashi ^{[2
]}

Usami, Noritaka ^{[3
,4
]}

Suemasu, Takashi ^{[1
,4
]}

机构：

[1] Univ Tsukuba, Inst Appl Phys, Tsukuba, Ibaraki 3058573, Japan

[2] Natl Inst Mat Sci, Tsukuba, Ibaraki 3050044, Japan

[3] Nagoya Univ, Grad Sch Engn, Nagoya, Aichi 4648603, Japan

[4] Japan Sci & Technol Agcy, CREST, Chiyoda Ku, Tokyo 1020075, Japan

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS | 2014年 / 53卷 / 07期

基金：

日本科学技术振兴机构;

关键词：

GRAIN-BOUNDARIES; BASI2; SILICON; GROWTH;

D O I：

10.7567/JJAP.53.078004

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We have grown a 400-nm-thick undoped n-BaSi2 epitaxial film on an n-Si(001) substrate by molecular beam epitaxy, and evaluated the diffusion length of minority carriers (holes) by an electron-beam-induced-current (EBIC) technique in the edge-scan configuration. The EBIC line-scan profile showed an exponential dependence on the distance from the tungsten probe. The diffusion length of minority carriers in the n-BaSi2 film was found to be approximately 1.5 mu m. This value is much smaller than that in undoped n-BaSi2 on Si(111). (C) 2014 The Japan Society of Applied Physics

引用

页数：3

共 31 条

[1] Influence of grain size and surface condition on minority-carrier lifetime in undoped n-BaSi2 on Si(111)
Takabe, Ryota
Hara, Kosuke O.
Baba, Masakazu
Du, Weijie
Shimada, Naoya
Toko, Kaoru
Usami, Noritaka
Suemasu, Takashi
JOURNAL OF APPLIED PHYSICS, 2014, 115 (19)
[2] Molecular beam epitaxy of BaSi2 thin films on Si(001) substrates
Toh, Katsuaki
Hara, Kosuke O.
Usami, Noritaka
Saito, Noriyuki
Yoshizawa, Noriko
Toko, Kaoru
Suemasu, Takashi
JOURNAL OF CRYSTAL GROWTH, 2012, 345 (01) : 16 - 21
[3] Characterization of defect levels in undoped n-BaSi2 epitaxial films on Si(111) by deep-level transient spectroscopy
Takeuchi, Hiroki
Du, Weijie
Baba, Masakazu
Takabe, Ryota
Toko, Kaoru
Suemasu, Takashi
JAPANESE JOURNAL OF APPLIED PHYSICS, 2015, 54 (07)
[4] Investigation of grain boundaries in BaSi2 epitaxial films on Si(111) substrates using transmission electron microscopy and electron-beam-induced current technique
Baba, Masakazu
Toh, Katsuaki
Toko, Kaoru
Saito, Noriyuki
Yoshizawa, Noriko
Jiptner, Karolin
Sekiguchi, Takashi
Hara, Kosuke O.
Usami, Noritaka
Suemasu, Takashi
JOURNAL OF CRYSTAL GROWTH, 2012, 348 (01) : 75 - 79
[5] Photoresponse properties of undoped BaSi2 epitaxial layers on n+-BaSi2/p+-Si(001) by molecular beam epitaxy
Koike, Shintaro
Baba, Masakazu
Takabe, Ryota
Zhang, Ning
Du, Weijie
Toko, Kaoru
Suemasu, Takashi
JAPANESE JOURNAL OF APPLIED PHYSICS, 2014, 53 (05)
[6] Minority Carrier Diffusion Length Measurements in Solar Cells by Electron Beam Induced Current
Maximenko, Sergey I.
Walters, Robert J.
2015 IEEE 42ND PHOTOVOLTAIC SPECIALIST CONFERENCE (PVSC), 2015,
[7] Electron beam induced current measurements of minority carrier diffusion length in gallium nitride
Chernyak, L
Osinsky, A
Temkin, H
Yang, JW
Chen, Q
Khan, MA
APPLIED PHYSICS LETTERS, 1996, 69 (17) : 2531 - 2533
[8] Large photoresponsivity in semiconducting BaSi2 epitaxial films grown on Si(001) substrates by molecular beam epitaxy
Koike, S.
Toh, K.
Baba, M.
Toko, K.
Hara, K. O.
Usami, N.
Saito, N.
Yoshizawa, N.
Suemasu, T.
JOURNAL OF CRYSTAL GROWTH, 2013, 378 : 198 - 200
[9] MEASUREMENTS OF MINORITY-CARRIER DIFFUSION LENGTH IN N-CULNS2 BY ELECTRON-BEAM-INDUCED CURRENT METHOD
SCHEER, R
WILHELM, M
LEWERENZ, HJ
JOURNAL OF APPLIED PHYSICS, 1989, 66 (11) : 5412 - 5415
[10] Room-temperature epitaxial growth of CeO2(001) thin films on Si(001) substrates by electron beam evaporation
Ami, T
Ishida, Y
Nagasawa, N
Machida, A
Suzuki, M
APPLIED PHYSICS LETTERS, 2001, 78 (10) : 1361 - 1363

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