Validated electro-thermal simulations of two different power MOSFET technologies and implications on their robustness

被引：0

作者：

de Filippis, Stefano ^{[1
,2
]}

Illing, Robert

Nelhiebel, Michael ^{[1
]}

Decker, Stefan ^{[4
]}

Koeck, Helmut ^{[1
,3
]}

Irace, Andrea ^{[2
]}

机构：

[1] KAI Kompetenzzentrum Automobil & Ind Elekt GmbH, Europastr 8, A-9524 Villach, Austria

[2] Univ Napoli Fed II, Dipartimento Ingn Biomed Elett Telecommun, I-80125 Naples, Italy

[3] Infineon Technol Austria AG, A-9500 Villach, Austria

[4] Infineon Technol AG, D-85579 Neubiberg, Germany

来源：

2013 25TH INTERNATIONAL SYMPOSIUM ON POWER SEMICONDUCTOR DEVICES AND ICS (ISPSD) | 2013年

关键词：

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Power MOSFETs integrated in modern Smart Power switches feature a substantial high current capability due to the very low value of their transconductance coefficient K. In this paper we demonstrate that the trend related to the increasing current capability implies a reduced thermal stability range which may lead to less robust devices. Electro-thermal simulations of two test chips featuring two different technologies show that the higher the value of K, the less stable the device thermal behavior. Simulation results have been validated by means of temperature measurements performed using an integrated temperature sensor.

引用

页码：325 / 328

页数：4

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