Low temperature growth of epitaxial (Ba, Sr)TiO2 thin film by sputter molecular beam epitaxy method

被引：6

作者：

Horiguchi, A ^{[1
]}

Watanabe, Y ^{[1
]}

机构：

[1] Kyushu Inst Technol, Fukuoka 8048550, Japan

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS | 1999年 / 38卷 / 9B期

关键词：

sputtering; MBE; epitaxy; ferroelectric; dielectric; (Ba; Sr)TiO3; low temperature process; negative ion; plasma;

D O I：

10.1143/JJAP.38.5314

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

A novel sputtering method that can be regarded as a new version of the molecular beam epitaxy (MBE) method is proposed. Epitaxial (Ba,Sr)TiO3 films are grown at a pressure below 6 x 10(-4) Torr at a large large-substrate distance of 24 cm. The highest temperature in all the deposition process including the in-situ post annealing is 350 degrees C. Additionally, a very smooth surface is confirmed by an atomic force microscopy.

引用

页码：5314 / 5316

页数：3

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