Scattering times in the two-dimensional electron gas of AlxGa1-xN/AlN/GaN heterostructures

被引：2

作者：

Han, Xiuxun ^{[1
]}

Honda, Yoshio ^{[2
,3
]}

Narita, Tetsuo ^{[2
,3
]}

Yamaguchi, Masahito ^{[2
,3
]}

Sawaki, Nobuhiko ^{[2
,3
]}

Tanaka, Tooru ^{[4
]}

Guo, Qixin ^{[4
]}

Nishio, Mitsushiro ^{[5
]}

机构：

[1] Saga Univ, Venture Business Lab, Saga 8408502, Japan

[2] Nagoya Univ, Dept Elect, Chikusa Ku, Nagoya, Aichi 4648603, Japan

[3] Nagoya Univ, Akasaki Res Ctr, Chikusa Ku, Nagoya, Aichi 4648603, Japan

[4] Saga Univ, Synchrotron Light Applicat Ctr, Saga 8408502, Japan

[5] Saga Univ, Dept Elect & Elect Engn, Saga 8408502, Japan

来源：

JOURNAL OF PHYSICS D-APPLIED PHYSICS | 2009年 / 42卷 / 04期

关键词：

ALGAN/GAN HETEROSTRUCTURES; DISLOCATION SCATTERING; TRANSPORT-PROPERTIES;

D O I：

10.1088/0022-3727/42/4/045112

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Low-field Hall and Shubnikov-de Haas (SdH) measurements were performed on two-dimensional electron gas of Al0.24Ga0.76N/GaN and Al0.24Ga0.76N/AlN/GaN heterostructures at a low temperature. A dramatic improvement in electron mobility is observed in Al0.24Ga0.76N/AlN/GaN heterostructures with 1 and 2 nm thick AlN interlayers. A further increase in the AlN thickness degrades the transport behaviour. Transport and quantum scattering times were derived from the corresponding Hall mobility and the oscillatory part of the SdH signal. The ratio of the transport scattering time and the quantum scattering time increases from 3.87 in the heterostructure without the AlN interlayer to 14.34 with the 1 nm AlN interlayer and to 12.45 with the 2 nm AlN interlayer. A modified scattering calculation due to charged dislocation with a finite length suggests that dislocation related long-range scattering event tends to dominate both transport and quantum scattering times when a thin AlN interlayer is introduced.

引用

页数：5

共 18 条

[1] Negative quasiclassical magnetoresistance in a high density two-dimensional electron gas in a AlxGa1-xN/GaN heterostructure -: art. no. 245323 [J].