Weak localization in AlxGa1-xAs/GaAs/AlxGa1-xAs heterostructures with electrostatically induced random antidot array

被引：2

作者：

Minkov, G. M. ^{[1
]}

Sherstobitov, A. A. ^{[1
]}

Germanenko, A. V. ^{[2
]}

Rut, O. E. ^{[2
]}

机构：

[1] RAS, Inst Met Phys, Ekaterinburg 620041, Russia

[2] Ural State Univ, Inst Phys & Appl Math, Ekaterinburg 620083, Russia

来源：

PHYSICAL REVIEW B | 2008年 / 78卷 / 19期

关键词：

aluminium compounds; gallium arsenide; III-V semiconductors; magnetoresistance; weak localisation;

D O I：

10.1103/PhysRevB.78.195319

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Results of experimental study of the weak localization in gated AlxGa1-xAs/GaAs/AlxGa1-xAs structures with artificial inhomogeneity of potential relief are presented. It has been found that the shape of the magnetoconductivity curve differs significantly from that measured for the homogeneous two-dimensional gas. This difference is shown to be caused by the difference in statistics of closed paths. The area distribution function of closed paths has been obtained using the Fourier transformation of the experimental magnetoconductivity curves taken at different temperatures. The results obtained are in qualitative agreement with the results of computer simulation.

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页数：8

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