All-Semiconductor Negative-Index Plasmonic Absorbers

被引：52

作者：

Law, S. ^{[1
]}

Roberts, C. ^{[2
]}

Kilpatrick, T. ^{[1
]}

Yu, L. ^{[1
]}

Ribaudo, T. ^{[3
]}

Shaner, E. A. ^{[3
]}

Podolskiy, V. ^{[2
]}

Wasserman, D. ^{[1
]}

机构：

[1] Univ Illinois, Dept Elect & Comp Engn, Micro & Nanotechnol Lab, Urbana, IL 61801 USA

[2] Univ Massachusetts, Dept Phys & Appl Phys, Lowell, MA 01854 USA

[3] Sandia Natl Labs, Albuquerque, NM 87185 USA

来源：

PHYSICAL REVIEW LETTERS | 2014年 / 112卷 / 01期

基金：

美国国家科学基金会; 美国能源部;

关键词：

Surface plasmons - Electromagnetic wave polarization;

D O I：

10.1103/PhysRevLett.112.017401

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

We demonstrate epitaxially grown all-semiconductor thin-film midinfrared plasmonic absorbers and show that absorption in these structures is linked to the excitation of highly confined negative-index surface plasmon polaritons. Strong (>98%) absorption is experimentally observed, and the spectral position and intensity of the absorption resonances are studied by reflection and transmission spectroscopy. Numerical models as well as an analytical description of the excited guided modes in our structures are presented, showing agreement with experiment. The structures investigated demonstrate a wavelength-flexible, all-semiconductor, plasmonic architecture with potential for both sensing applications and enhanced interaction of midinfrared radiation with integrated semiconductor optoelectronic elements.

引用

页数：5

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