Symmetry analysis and exact invariant solutions for the drift-diffusion model of semiconductors

被引：3

作者：

Romano, V ^{[1
]}

Sellier, JM ^{[1
]}

Torrisi, M ^{[1
]}

机构：

[1] Univ Catania, Dipartimento Matemat & Informat, I-95125 Catania, Italy

来源：

PHYSICA A-STATISTICAL MECHANICS AND ITS APPLICATIONS | 2004年 / 341卷

关键词：

semiconductors; drift-diffusion models; symmetry analysis; exact solutions;

D O I：

10.1016/j.physa.2004.04.121

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

The symmetry classification of the drift-diffusion models for semiconductors is performed. Reduced systems and examples of exact invariant solutions are shown. (C) 2004 Elsevier B.V. All rights reserved.

引用

页码：62 / 72

页数：11

共 11 条

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[2]

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[3]

HANSCH W, 1991, DRIFT DIFFUSION EQUA

[4]

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[5]

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[6]

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[7]

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Romano, V ;

Torrisi, M .

JOURNAL OF PHYSICS A-MATHEMATICAL AND GENERAL, 1999, 32 (45) :7953-7963

[9] Symmetry analysis and exact invariant solutions for a class of energy-transport models of semiconductors [J].

Romano, V ;

Valenti, A .

JOURNAL OF PHYSICS A-MATHEMATICAL AND GENERAL, 2002, 35 (07) :1751-1762

[10]

ROMANO V, 2003, IN PRESS COMMUN NONL

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