High Curie temperature for La0.7Sr0.3MnO3 thin films deposited on CeO2/YSZ-based buffered silicon substrates

被引：38

作者：

Perna, P. ^{[1
,2
,3
]}

Mechin, L. ^{[1
]}

Chauvat, M. P. ^{[4
]}

Ruterana, P. ^{[4
]}

Simon, Ch ^{[5
]}

di Uccio, U. Scotti ^{[2
,3
]}

机构：

[1] Univ Caen Basse Normandie, CNRS, ENSICAEN, GREYC UMR 6072, F-14050 Caen, France

[2] Univ Naples Federico 2, CNR, INFM, CRS Coherentia, I-80126 Naples, Italy

[3] Univ Naples Federico 2, Dipartimento Sci Fis, I-80126 Naples, Italy

[4] Univ Caen Basse Normandie, CNRS, CEA ENSICAEN, CIMAP UMR 6252, F-14050 Caen, France

[5] CNRS, ENSICAEN, CRISMAT UMR 6508, F-14050 Caen, France

来源：

JOURNAL OF PHYSICS-CONDENSED MATTER | 2009年 / 21卷 / 30期

关键词：

EPITAXIAL-GROWTH; DEVICES; STRAIN; YBA2CU3O7-DELTA; MANGANITES; SI;

D O I：

10.1088/0953-8984/21/30/306005

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

Two kinds of epitaxial structures were grown by standard pulsed laser deposition on (001) Si, namely La0.7Sr0.3MnO3/Bi4Ti3O12/CeO2/YSZ/Si (BTO-based), and La0.7Sr0.3MnO3/SrTiO3/CeO2/YSZ/Si (STO-based) multilayers. The samples were investigated by means of x-ray diffraction, transmission electron microscopy, magnetic and transport measurements. The Curie temperature T-C of the BTO-based samples was found to be higher (360 K) than for the typical reference epitaxial LSMO film grown on (001) SrTiO3 single crystal (345 K), due to high compressive in-plane strain. The STO-based samples show high structural quality, low roughness and high T-C (350 K), making them interesting candidates for use in innovative LSMO-based bolometers or spintronic devices operating at room temperature.

引用

页数：5

共 26 条

[1] Spin polarized La0.7Sr0.3MnO3 thin films on silicon [J].

Bergenti, I. ;

Dediu, V. ;

Arisi, E. ;

Cavallini, M. ;

Biscarini, F. ;

Taliani, C. ;

de Jong, M. P. ;

Dennis, C. L. ;

Gregg, J. F. ;

Solzi, M. ;

Natali, M. .

JOURNAL OF MAGNETISM AND MAGNETIC MATERIALS, 2007, 312 (02) :453-457

[2] Oxide spintronics [J].

Bibes, Manuel ;

Barthelemy, Agnes .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 2007, 54 (05) :1003-1023

[3] Effect of strain in La0.7Sr0.3MnO3 epitaxial films with different crystallographic orientation [J].

di Uccio, U. Scotti ;

Davidson, B. ;

Di Capua, R. ;

Granozio, F. Miletto ;

Pepe, G. ;

Perna, P. ;

Ruotolo, A. ;

Salluzzo, M. .

JOURNAL OF ALLOYS AND COMPOUNDS, 2006, 423 (1-2) :228-231

[4] Tunable epitaxial growth of magnetoresistive La2/3Sr1/3MnO3 thin films [J].

Fontcuberta, J ;

Bibes, M ;

Martínez, B ;

Trtik, V ;

Ferrater, C ;

Sánchez, F ;

Varela, M .

JOURNAL OF APPLIED PHYSICS, 1999, 85 (08) :4800-4802

[5] Epitaxial La0.7Sr0.3MnO3 thin films with two in-plane orientations on silicon substrates with yttria-stabilized zirconia and YBa2Cu3O7-δ as buffer layers -: art. no. 073905 [J].

Goh, WC ;

Yao, K ;

Ong, CK .

JOURNAL OF APPLIED PHYSICS, 2005, 97 (07)

[6] CMR manganites: physics, thin films and devices [J].

Haghiri-Gosnet, AM ;

Renard, JP .

JOURNAL OF PHYSICS D-APPLIED PHYSICS, 2003, 36 (08) :R127-R150

[7] The effect of strained Si1-xGex and Si1-yCy layers for La0.75Sr0.25MnO3 films grown on oxide-buffered Si substrates -: art. no. 014903 [J].

Kim, JH ;

Grishin, AM ;

Radamson, HH .

JOURNAL OF APPLIED PHYSICS, 2006, 99 (01) :1-4

[8] Free-standing epitaxial La1-x(Sr,Ca)xMnO3 membrane on Si for uncooled infrared microbolometer -: art. no. 033502 [J].

Kim, JH ;

Grishin, AM .

APPLIED PHYSICS LETTERS, 2005, 87 (03)

[9] Epitaxial colossal magnetoresistive La0.67(Sr,Ca)0.33MnO3 films on Si [J].

Kim, JH ;

Khartsev, SI ;

Grishin, AM .

APPLIED PHYSICS LETTERS, 2003, 82 (24) :4295-4297

[10] Crystalline oxides on silicon: The first five monolayers [J].

McKee, RA ;

Walker, FJ ;

Chisholm, MF .

PHYSICAL REVIEW LETTERS, 1998, 81 (14) :3014-3017

← 1 2 3 →