Operating Principles, Design Considerations, and Experimental Characteristics of High-Voltage 4H-SiC Bidirectional IGBTs

被引：18
作者：
Chowdhury, Sauvik [1 ]
Hitchcock, Collin W. [2 ]
Stum, Zachary [3 ]
Dahal, Rajendra P. [2 ]
Bhat, Ishwara B. [2 ]
Chow, T. Paul [2 ]
机构：
[1] Monolith Semicond Inc, Round Rock, TX 78664 USA
[2] Rensselaer Polytech Inst, Dept Elect & Syst Engn, Dept Comp & Syst Engn, Troy, NY 12180 USA
[3] Gen Elect Global Res Ctr, Niskayuna, NY 12309 USA
来源：
IEEE TRANSACTIONS ON ELECTRON DEVICES | 2017年 / 64卷 / 03期
关键词：
Bidirectional switch; high voltage; insulate gate bipolar transistors; silicon carbide (SiC); JUNCTION TERMINATION EXTENSION;
D O I：
10.1109/TED.2016.2631241
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Bidirectional power transistors are essential components of several power electronics systems, such as matrix converters. In this paper, we present the operating principles, design considerations, and experimental characteristics of a novel planar gate 4H-SiC bidirectional insulated gate bipolar transistors. The impact of variousdrift layer and unit cell parameters on blocking, on-state, and switching performance has been evaluated by using numerical simulations, and critical performance tradeoffs have been discussed. Based on the optimized design, devices were fabricated on lightly doped free-standing n-type 4H-SiC wafers. Fabricated devices showed good conductivity modulation, with a forward voltage drop of 9.7 V at 50 A/cm(2) at room temperature, which increased to 11.5 V at 150 degrees C.
引用
收藏
页码：888 / 896
页数：9
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