Diffusive and ballistic regimes for transfer resistances

被引：0

作者：

Vinnichenko, VY ^{[1
]}

Chernikh, AV ^{[1
]}

Mikhailov, GM ^{[1
]}

机构：

[1] Russian Acad Sci, Inst Microelect Technol & High Pur Mat, Chernogolovka 142432, Moscow Region, Russia

来源：

MICRO- AND NANOELECTRONICS 2003 | 2004年 / 5401卷

关键词：

transfer resistance; ballistic electron transport; metallic nanostructure;

D O I：

10.1117/12.558777

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We investigated transfer resistance of single crystalline W (001) nanostructure in the temperature interval 4.2 - 295 K. It is found that the crossover from liquid- to gas- like flow electron transport takes place when electrode spacing is comparable to electron mean free path. Under diffusive electron transport both positive and negative signs of the transfer resistance are observed in the depending on the geometry of applied current. The latter is not found at ballistic electron transport. Transfer resistances change faster than liner dependence against the reversal electron mean free path.

引用

页码：442 / 449

页数：8

共 10 条

[1] 4-TERMINAL PHASE-COHERENT CONDUCTANCE [J].