Analysis of dopant metrology using Scanning Capacitance Microscopy and Transmission Electron Microscopy as complementary techniques

被引：1
|
作者：
Natarajan, M
Sheng, TT
Pey, KL
Lee, YP
Radhakrishnan, MK
机构：
来源：
PROCEEDINGS OF THE 1997 6TH INTERNATIONAL SYMPOSIUM ON THE PHYSICAL & FAILURE ANALYSIS OF INTEGRATED CIRCUITS | 1997年
关键词：
D O I：
10.1109/IPFA.1997.638126
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
The results of physical analysis carried out on Dynamic Random Access Memory (DRAM) devices, using Scanning Capacitance Microscopy (SCM) and Transmission Electron Microscopy (TEM) to investigate specifically the dopant profile at the sidewall of the trench capacitor structures is presented here. The SCM results provide information on the dopant metrology on samples, whereas the TEM analysis, which includes junction delineation, further supports the finding of dopant distribution as well as other physical phenomena.
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页码：86 / 91
页数：6
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