A nanoanalytical investigation of high-k dielectric gate stacks for GaAs based MOSFET devices

被引：10
|
作者：
Longo, P. [1 ]
Craven, A. J. [1 ]
Holland, M. C. [2 ]
Moran, D. A. J. [2 ]
Thayne, I. G. [2 ]
机构：
[1] Univ Glasgow, Dept Phys & Astron, Glasgow G12 8QQ, Lanark, Scotland
[2] Univ Glasgow, Dept Elect & Elect Engn, Glasgow G12 8LT, Lanark, Scotland
来源：
MICROELECTRONIC ENGINEERING | 2009年 / 86卷 / 03期
基金：
英国工程与自然科学研究理事会;
关键词：
TEM analysis; EELS spectrum imaging; STEM imaging compositional analysis; Ga and Gd mixed dielectric oxide layers; GaAs based MOSFET devices; Annealing effects;
D O I：
10.1016/j.mee.2008.08.013
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
In this paper a quantitative determination of the elemental distributions across a similar to 10 nm Ga(2)O(3)/GdGaO layer with Pt metal gate cap on top of an InGaAs/AlGaAs/GaAs substrate is presented. Some effects of annealing on the elemental distribution across the Ga(2)As/Ga(2)O(3)GGaO oxide layer are described. The paper also discusses the analysis of the interface GaAs/Ga(2)O(3)/GGO at a sub-nm level by high-resolution HAADF STEM imaging. (C )2008 Elsevier B.V. All rights reserved
引用
收藏
页码：214 / 217
页数：4
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