Anomalous low-frequency noise in synthetic antiferromagnets: Possible evidence of current-induced domain-wall motion

被引：14

作者：

Herranz, D. ^{[1
,2
]}

Guerrero, R. ^{[1
,2
]}

Villar, R. ^{[1
,2
]}

Aliev, F. G. ^{[1
,2
]}

Swaving, A. C. ^{[3
]}

Duine, R. A. ^{[3
]}

van Haesendonck, C. ^{[4
]}

Vavra, I. ^{[5
]}

机构：

[1] Univ Autonoma Madrid, Dept Fis Mat Condensada, Canto Blanco, Spain

[2] Inst Nicolas Cabrera Ciencia Mat, Madrid 28049, Spain

[3] Univ Utrecht, Inst Theoret Phys, NL-3584 CE Utrecht, Netherlands

[4] Katholieke Univ Leuven, Lab Solid State Phys & Magnetism, B-3001 Leuven, Belgium

[5] IEE SAS, Bratislava 84239, Slovakia

来源：

PHYSICAL REVIEW B | 2009年 / 79卷 / 13期

关键词：

antiferromagnetic materials; chromium; critical currents; ferromagnetic materials; iron; magnetic domain walls; magnetic multilayers; magnetic noise; magnetic storage; magnetoelectric effects; magnetoelectronics; GIANT MAGNETORESISTANCE; MAGNETIC SUPERLATTICES; COUPLED MULTILAYERS; EXCITATION; WAVE;

D O I：

10.1103/PhysRevB.79.134423

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

We investigate current-driven magnetization dynamics in synthetic [Fe/Cr](10) multilayer antiferromagnets by using low-frequency voltage noise measurements. We observe suppression of the noise above a critical current density of about 2x10(5) A/cm(2). Theoretical estimates suggest that this effect may be attributed to current-induced motion of domain walls in the antiferromagnet. The observed critical current density is about one order of magnitude smaller than for ferromagnetic systems. Our results are relevant for applications of antiferromagnetic metal spintronics in, e.g., magnetic memory storage technology.

引用

页数：6

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