Continuous semianalytical modeling of vertical surrounding-gate tunnel FET: analog/RF performance evaluation

被引:6
|
作者
Abdelmalek, Nidhal [1 ]
Djeffal, Faycal [1 ,2 ]
Bentrcia, Toufik [2 ]
机构
[1] Univ Mostefa Benboulaid Batna 2, Dept Elect, LEA, Batna 05000, Algeria
[2] Univ Batna 1, Dept Phys, LEPCM, Batna 05000, Algeria
关键词
Continuous model; Surrounding gate; High-kappa; Tunneling FET; Analog/RF; Linearity; THRESHOLD VOLTAGE; MOSFET; DRAIN; TRANSISTORS; EQUATION; IMPACT;
D O I
10.1007/s10825-018-1141-9
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
A continuous and accurate model based on the two-dimensional (2D) potential solution of a tunnel field-effect transistor (TFET) with undoped vertical surrounding-gate (VSG) structure is proposed. Both ambipolarity and dual modulation effects are included to obtain a more accurate analytical model, whose validity is demonstrated by comparison with two-dimensional numerical simulations using ATLAS-2D. The continuity of the proposed model enables extraction of analog/radiofrequency (RF) parameters and device figures of merit. Moreover, the effect of introducing a high-kappa layer on the gate oxide in improving the behavior of the VSG-TFET is explored for use in high-performance analog/RF applications. The proposed continuous analytical model can be easily implemented in commercial simulators to study and investigate VSG-TFET-based nanoelectronic circuits.
引用
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页码:724 / 735
页数:12
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