Noncentrosymmetric chalcohalide NaBa4Ge3S10Cl with large band gap and IR NLO response

被引：101

作者：

Feng, Kai ^{[1
,2
,3
]}

Kang, Lei ^{[1
,2
,3
]}

Lin, Zheshuai ^{[1
,2
]}

Yao, Jiyong ^{[1
,2
]}

Wu, Yicheng ^{[1
,2
]}

机构：

[1] Chinese Acad Sci, Tech Inst Phys & Chem, Ctr Crystal Res & Dev, Beijing 100190, Peoples R China

[2] Chinese Acad Sci, Tech Inst Phys & Chem, Key Lab Funct Crystals & Laser Technol, Beijing 100190, Peoples R China

[3] Univ Chinese Acad Sci, Beijing 100049, Peoples R China

来源：

JOURNAL OF MATERIALS CHEMISTRY C | 2014年 / 2卷 / 23期

基金：

中国国家自然科学基金;

关键词：

STRONG 2ND-HARMONIC GENERATION; NONLINEAR-OPTICAL MATERIAL; CRYSTAL-STRUCTURES; DIMENSIONAL REDUCTION; PARAMETRIC AMPLIFICATION; MIDDLE IR; SE; DAMAGE; SERIES; RB;

D O I：

10.1039/c4tc00060a

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

By introducing a highly electronegative halide anion into chalcogenides, a novel chalcohalide, NaBa4Ge3S10Cl, has been synthesized by a conventional high temperature solid state method. It crystallizes in a new structure type of space group P6(3), with a = 9.7653(2) angstrom, c = 12.0581(3) angstrom and Z = 2. The fundamental unit is the unique [Ge3S9] ring, comprised of three GeS4 tetrahedra sharing corner S atoms. The [Ge3S9] rings are arranged to form pseudo layers, which are stacked through Na-Cl-Ba chains to build up the structure. The macroscopic packing of these [Ge3S9] rings provides the material with a moderate nonlinear optical (NLO) response at 2090 nm fundamental light. Furthermore, UV-vis-IR spectroscopy shows that NaBa4Ge3S10Cl has a very large band gap of 3.49 eV, which is very beneficial for increasing the laser damage threshold and avoiding the two-photon absorption problem of conventional near IR laser pumping sources.

引用

页码：4590 / 4596

页数：7

共 89 条

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