Simultaneous enhancement of electron overflow reduction and hole injection promotion by tailoring the last quantum barrier in InGaN/GaN light-emitting diodes

被引：14

作者：

Kyaw, Zabu ^{[1
]}

Zhang, Zi-Hui ^{[1
]}

Liu, Wei ^{[1
]}

Tan, Swee Tiam ^{[1
]}

Ju, Zhen Gang ^{[1
]}

Zhang, Xue Liang ^{[1
]}

Ji, Yun ^{[1
]}

Hasanov, Namig ^{[1
]}

Zhu, Binbin ^{[1
]}

Lu, Shunpeng ^{[1
]}

Zhang, Yiping ^{[1
]}

Teng, Jing Hua ^{[2
]}

Wei, Sun Xiao ^{[1
]}

Demir, Hilmi Volkan ^{[1
,3
,4
,5
]}

机构：

[1] Nanyang Technol Univ, Sch Elect & Elect Engn, LUMINOUS Ctr Excellence Semicond Lighting & Displ, Singapore 639798, Singapore

[2] ASTAR, Inst Mat Res & Engn, Singapore 117602, Singapore

[3] Nanyang Technol Univ, Sch Phys & Math Sci, Singapore 637371, Singapore

[4] Bilkent Univ, Dept Elect & Elect, Dept Phys, TR-06800 Ankara, Turkey

[5] Bilkent Univ, UNAM Inst Mat Sci & Nanotechnol, TR-06800 Ankara, Turkey

来源：

APPLIED PHYSICS LETTERS | 2014年 / 104卷 / 16期

基金：

新加坡国家研究基金会;

关键词：

EFFICIENCY DROOP; SPONTANEOUS POLARIZATION; HIGH-POWER; ALGAN;

D O I：

10.1063/1.4873395

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

A three-step graded undoped-InGaN layers embedded between the GaN last quantum barrier layer and the p-AlGaN electron blocking layer was proposed and its effect on the performance of InGaN/GaN light-emitting diodes was investigated both experimentally and theoretically. In the proposed structure, the electron leakage is found to be effectively reduced, while the hole injection efficiency is simultaneously increased significantly, hence enabling a greatly enhanced radiative recombination rate within the active region. As a result, improvements of 12.25% in the optical output power and 11.98% in the external quantum efficiency are obtained from the proposed device with the respect to the reference device. (C) 2014 AIP Publishing LLC.

引用

页数：5

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