InGaN/GaN/AlGaN-based laser diodes with modulation-doped strained-layer superlattices

被引：439

作者：

Nakamura, S

Senoh, M

Nagahama, S

Iwasa, N

Yamada, T

Matsushita, T

Kiyoku, H

Sugimoto, Y

Kozaki, T

Umemoto, H

Sano, M

Chocho, K

机构：

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS | 1997年 / 36卷 / 12A期

关键词：

GaN; InGaN; quantum well; laser; lifetime; self-pulsation; selective growth;

D O I：

10.1143/JJAP.36.L1568

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

InGaN multi-quantum-well-structure laser diodes with Al0.14Ga0.86N/GaN modulation doped strained-layer superlattice cladding layers grown on an epitaxially laterally overgrown GaN substrate were demonstrated to have an estimated lifetime of more than 10000 h under continuous-wave operation at 20 degrees C. Under operation at a high temperature of 50 degrees C, the lifetime was longer than 1000 h. With the operating current increasing to above the threshold, a self-pulsation with a high frequency of 3.5 GHz was observed. The carrier lifetime was estimated to be 1.8 ns from the pulsed modulation of the LDs.

引用

页码：L1568 / L1571

页数：4

共 13 条

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