InGaN/GaN/AlGaN-based laser diodes with modulation-doped strained-layer superlattices

被引：441

作者：

Nakamura, S

Senoh, M

Nagahama, S

Iwasa, N

Yamada, T

Matsushita, T

Kiyoku, H

Sugimoto, Y

Kozaki, T

Umemoto, H

Sano, M

Chocho, K

机构：

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS | 1997年 / 36卷 / 12A期

关键词：

GaN; InGaN; quantum well; laser; lifetime; self-pulsation; selective growth;

D O I：

10.1143/JJAP.36.L1568

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

InGaN multi-quantum-well-structure laser diodes with Al0.14Ga0.86N/GaN modulation doped strained-layer superlattice cladding layers grown on an epitaxially laterally overgrown GaN substrate were demonstrated to have an estimated lifetime of more than 10000 h under continuous-wave operation at 20 degrees C. Under operation at a high temperature of 50 degrees C, the lifetime was longer than 1000 h. With the operating current increasing to above the threshold, a self-pulsation with a high frequency of 3.5 GHz was observed. The carrier lifetime was estimated to be 1.8 ns from the pulsed modulation of the LDs.

引用

页码：L1568 / L1571

页数：4

共 13 条

[1] Pulsed operation lasing in a cleaved-facet InGaN/GaN MQW SCH laser grown on 6H-SiC [J].

Bulman, GE ;

Doverspike, K ;

Sheppard, ST ;

Weeks, TW ;

Kong, HS ;

Dieringer, HM ;

Edmond, JA ;

Brown, JD ;

Swindell, JT ;

Schetzina, JF .

ELECTRONICS LETTERS, 1997, 33 (18) :1556-1557

[2] Room temperature pulsed operation of nitride based multi-quantum-well laser diodes with cleaved facets on conventional C-face sapphire substrates [J].

Itaya, K ;

Onomura, M ;

Nishio, J ;

Sugiura, L ;

Saito, S ;

Suzuki, M ;

Rennie, J ;

Nunoue, SY ;

Yamamoto, M ;

Fujimoto, H ;

Kokubun, Y ;

Ohba, Y ;

Hatakoshi, G ;

Ishikawa, M .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 1996, 35 (10B) :L1315-L1317

[3] SELECTIVE GROWTH OF WURTZITE GAN AND ALXGA1-XN ON GAN SAPPHIRE SUBSTRATES BY METALORGANIC VAPOR-PHASE EPITAXY [J].

KATO, Y ;

KITAMURA, S ;

HIRAMATSU, K ;

SAWAKI, N .

JOURNAL OF CRYSTAL GROWTH, 1994, 144 (3-4) :133-140

[4] PHOTOLUMINESCENCE CHARACTERISTICS OF ALGAN-GAN-ALGAN QUANTUM-WELLS [J].

KHAN, MA ;

SKOGMAN, RA ;

VANHOVE, JM ;

KRISHNANKUTTY, S ;

KOLBAS, RM .

APPLIED PHYSICS LETTERS, 1990, 56 (13) :1257-1259

[5] InGaN laser diode grown on 6H-SiC substrate using low-pressure metal organic vapor phase epitaxy [J].

Kuramata, A ;

Domen, K ;

Soejima, R ;

Horino, K ;

Kubota, S ;

Tanahashi, T .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 1997, 36 (9AB) :L1130-L1132

[6]

Mack MP, 1997, MRS INTERNET J N S R, V2, part. no.

[7] DEFECTS IN EPITAXIAL MULTILAYERS .1. MISFIT DISLOCATIONS [J].

MATTHEWS, JW ;

BLAKESLEE, AE .

JOURNAL OF CRYSTAL GROWTH, 1974, 27 (DEC) :118-125

[8] High-power, long-lifetime InGaN multi-quantum-well-structure laser diodes [J].

Nakamura, S ;

Senoh, M ;

Nagahama, S ;

Iwasa, N ;

Yamada, T ;

Matsushita, T ;

Sugimoto, Y ;

Kiyoku, H .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 1997, 36 (8B) :L1059-L1061

[9]

Nakamura S., 1997, BLUE LASER DIODE GAN

[10] GROWTH OF AIN/GAN LAYERED STRUCTURES BY GAS SOURCE MOLECULAR-BEAM EPITAXY [J].

SITAR, Z ;

PAISLEY, MJ ;

YAN, B ;

RUAN, J ;

CHOYKE, WJ ;

DAVIS, RF .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1990, 8 (02) :316-322

← 1 2 →