Deep-ultraviolet emission from an InGaAs semiconductor laser

被引：10

作者：

Wang, SM ^{[1
]}

Shen, YH

Xu, JX

Hu, LG

Zhu, J

Yang, DR

Zhang, H

Zeng, YW

Yao, JQ

机构：

[1] Zhejiang Univ, Dept Phys, Hangzhou 310027, Peoples R China

[2] Zhejiang Univ, State Key Lab Silicon Mat, Hangzhou 310027, Peoples R China

[3] Zhejiang Univ, Ctr Anal & Measurement, Hangzhou 310028, Peoples R China

[4] Tianjin Univ, Inst Laser & Optoelect, Tianjin 300072, Peoples R China

来源：

APPLIED PHYSICS LETTERS | 2004年 / 84卷 / 16期

关键词：

D O I：

10.1063/1.1707218

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

It is reported that a normal InGaAs laser diode (LD) operating at 980 nm possesses a second harmonic at 490 nm and a strong deep-UV emission at room temperature. By comparing with the radiation from cadmium sulphide (CdS) nanoparticles and nanowires, it is found that the UV emission from the LD can be attributed to a characterized radiation of nanoscaled semiconductors. By doping different semiconductor nanomaterials into the active layers of the LD and taking some effective techniques, such as cavity optimization, the wavelength, and the power output of the UV emission could be adjusted. (C) 2004 American Institute of Physics.

引用

页码：3007 / 3009

页数：3

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