Increasing Sensitivity of Oxide Nanoparticle Photoresists

被引：29

作者：

Chakrabarty, Souvik ^{[1
]}

Sarma, Chandra ^{[2
]}

Li, Li ^{[1
]}

Giannelis, Emmanuel P. ^{[1
]}

Ober, Christopher K. ^{[1
]}

机构：

[1] Cornell Univ, Dept Mat Sci & Engn, Ithaca, NY 14853 USA

[2] SEMATECH, Albany, NY 12203 USA

来源：

EXTREME ULTRAVIOLET (EUV) LITHOGRAPHY V | 2014年 / 9048卷

关键词：

nanoparticle photoresist; patterning mechanism; metal oxide; lithography; sensitivity; EUV;

D O I：

10.1117/12.2046555

中图分类号：

O43 [光学];

学科分类号：

070207 ; 0803 ;

摘要：

Previous investigations on the patterning mechanism of nanoparticle photoresists provided insight into ligand displacement exerting a controlling influence on dissolution behavior of nanoparticles in organic developers. Nanoparticle core-ligand interaction which dictates ligand displacement would ultimately translate to the sensitivity of the photoresist. The current study investigates enhancement of resist sensitivity via altering the core-ligand interaction of the nanoparticle, which further emphasizes our proposed patterning hypothesis.

引用

页数：5