Etching Mechanism on HfAlO3 Thin Films Using Adaptively Coupled Plasma System

被引：0

作者：

Huang, Jing ^{[1
]}

Joo, Young-Hee ^{[1
]}

Kim, Chang-Il ^{[1
]}

机构：

[1] Chung Ang Univ, Sch Elect & Elect Engn, Seoul 06974, South Korea

来源：

SCIENCE OF ADVANCED MATERIALS | 2016年 / 8卷 / 12期

基金：

新加坡国家研究基金会;

关键词：

HfAlO3; ACP; OES; XPS; AFM; DIELECTRICS;

D O I：

10.1166/sam.2016.2982

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

By using an adaptively coupled plasma system, the etching rate of HfAlO3 thin films and their selectivity to SiO2 thin films were investigated as a function of gas mixture ratio. The chemical reaction on the surface was investigated by X-ray photoelectron spectroscopy (XPS). From the results, we can discern that the etching of HfAlO3 thin films follows the ion-assisted chemical etching. Moreover, Hf and Al on the surface were removed by chemical reactions with the Cl radicals, and by physical bombardments.

引用

页码：2309 / 2312

页数：4