A comprehensive model of frequency dispersion in 4H-SiC MESFET

被引：10
|
作者：
Lu, Hongliang [1 ]
Zhang, Yimen [1 ]
Zhang, Yuming [1 ]
Zhang, Tao [1 ]
机构：
[1] Xidian Univ, Inst Microelect, Key Lab Wide Band Gap Semicond Mat & Devices, Minist Educ, Xian 710071, Peoples R China
来源：
SOLID-STATE ELECTRONICS | 2009年 / 53卷 / 03期
基金：
中国国家自然科学基金;
关键词：
4H-SiC; Metal semiconductor field effect transistor (MESFET); Trap effect; Frequency dispersion;
D O I：
10.1016/j.sse.2008.12.004
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
A comprehensive model to accurately and simply describe the trapping property and its influence on device frequency characteristics is proposed for SiC MESFET. DC performance is simulated and trap parameters are extracted. Both positive and negative frequency dispersions of transconductance are simulated and analyzed with deep level traps and self-heating effects. Good agreements with reported results are obtained. (C) 2009 Elsevier Ltd. All rights reserved.
引用
收藏
页码：285 / 291
页数：7
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