Saturation of VCMA in out-of-plane magnetized CoFeB/MgO/CoFeB magnetic tunnel junctions

被引：3

作者：

Williamson, M. ^{[1
]}

de Rozieres, M. ^{[1
]}

Almasi, H. ^{[2
]}

Chao, X. ^{[3
]}

Wang, W. ^{[2
]}

Wang, J. -P. ^{[3
]}

Tsoi, M. ^{[1
]}

机构：

[1] Univ Texas Austin, Dept Phys, Austin, TX 78712 USA

[2] Univ Arizona, Dept Phys, Tucson, AZ 85721 USA

[3] Univ Minnesota, Dept Elect & Comp Engn, Minneapolis, MN 55455 USA

来源：

AIP ADVANCES | 2018年 / 8卷 / 05期

关键词：

MULTILAYER; EXCITATION;

D O I：

10.1063/1.5007676

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

Voltage controlled magnetic anisotropy (VCMA) currently attracts considerable attention as a novel method to control and manipulate magnetic moments in high-speed and low-power spintronic applications based on magnetic tunnel junctions (MTJs). In our experiments, we use ferromagnetic resonance (FMR) to study and quantify VCMA in out-of-plane magnetized CoFeB/MgO/CoFeB MTJ pillars. FMR is excited by applying a microwave current and detected via a small rectified voltage which develops across MTJ at resonance. The VCMA effective field can be extracted from the measured resonance field and was found to vary as a function of electrical bias applied to MTJ. At low applied biases, we observe a linear shift of the VCMA field as a function of the applied voltage which is consistent with the VCMA picture based on the bias-induced electron migration across the MgO/CoFeB interface. At higher biases, both positive and negative, we observe a deviation from the linear behavior which may indicate a saturation of the VCMA effect. These results are important for the design of MTJ-based applications. (C) 2017 Author(s).

引用

页数：4

共 23 条

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