Reconstruction of IrO2/(Pb, La)(Zr, Ti)O3 (PLZT) interface by optimization of postdeposition annealing and sputtering conditions

被引:6
作者
Nomura, Kenji [1 ]
Wang, Wensheng [2 ]
Nakamura, Ko [2 ]
Eshita, Takashi [2 ,3 ]
Takai, Kazuaki [2 ]
Ozawa, Soichiro [2 ]
Yamaguchi, Hideshi [1 ]
Mihara, Satoru [2 ]
Hikosaka, Yukinobu [2 ]
Saito, Hitoshi [2 ]
Kataoka, Yuji [1 ]
Kojima, Manabu [2 ]
机构
[1] Fujitsu Labs Ltd, Devices & Mat Lab, Kawasaki, Kanagawa 2118588, Japan
[2] Fujitsu Semicond Ltd, Syst Memory Co, Technol Div, Yokohama, Kanagawa 2220033, Japan
[3] Wakayama Univ, Wakayama 6408510, Japan
关键词
THIN-FILM CAPACITORS; ELECTRICAL-PROPERTIES; FERROELECTRIC PROPERTIES; PIEZOELECTRIC PROPERTIES; DEGRADATION; ELECTRODE; HYDROGEN; LAYERS; IR; CONDUCTION;
D O I
10.1063/1.5091501
中图分类号
O59 [应用物理学];
学科分类号
摘要
We reconstruct the interface between ferroelectric (FE) lanthanum-doped lead zirconate titanate (PLZT) and an iridium oxide (IrOx) top electrode (TE), taking advantage of the interdiffusion of Ir and Pb during postdeposition annealing. The tetragonal perovskite phase with a low c/a axis ratio at the IrOx/PLZT interface is observed by X-ray diffraction. It is suggested that the low c/a axis ratio in the interfacial layer is due to the effect of diffusion of Ir from the TE-IrOx. It is also considered that the low c/a axis ratio interfacial layer functions as a nucleation layer for reversal of polarization, thereby achieving a low coercive electric field. The formation of the interfacial layer is very sensitive to the O-2 content of the Ar/O-2 atmosphere during TE-IrOx deposition. Although an optimized Ar/O-2 ratio achieves excellent polarization characteristics (high polarization value and low coercive field), the optimum Ar/O-2 region is very narrow at around 36% O-2. In other Ar/O-2 regions, a pyrochlore phase is formed at the interface owing to interdiffusion of the TE and FE films, and polarization characteristics deteriorate. Published under license by AIP Publishing.
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页数:9
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