1.3 μm InAs/GaAs quantum dot DFB laser integrated on a Si waveguide circuit by means of adhesive die-to-wafer bonding

被引：40

作者：

Uvin, Sarah ^{[1
,2
]}

Kumari, Sulakshna ^{[1
,2
]}

De Groote, Andreas ^{[1
,2
]}

Verstuyft, Steven ^{[1
,2
]}

Lepage, Guy ^{[3
]}

Verheyen, Peter ^{[3
]}

Van Campenhout, Joris ^{[3
]}

Morthier, Geert ^{[1
,2
]}

Van Thourhout, Dries ^{[1
,2
]}

Roelkens, Gunther ^{[1
,2
]}

机构：

[1] Ghent Univ Imec, iGent, Photon Res Grp, Dept Informat Technol, Technol Pk Zwijnaarde 15, B-9052 Ghent, Belgium

[2] Univ Ghent, Ctr Nano & Biophoton NB Photon, Ghent, Belgium

[3] IMEC, Kapeldreef 75, B-3001 Leuven, Belgium

来源：

OPTICS EXPRESS | 2018年 / 26卷 / 14期

关键词：

SILICON PHOTONICS; LOW-THRESHOLD;

D O I：

10.1364/OE.26.018302

中图分类号：

O43 [光学];

学科分类号：

070207 ; 0803 ;

摘要：

In this paper we report a single mode InAs/GaAs quantum dot distributed feedback laser at 1.3 mu m wavelength heterogeneously integrated on a Si photonics waveguide circuit. Single mode lasing around 1300 nm with a side-mode suppression ratio higher than 40 dB is demonstrated. High temperature operation with continuous wave lasing up to 100 degrees C is obtained. Threshold current densities as low as 205 A/cm(2) were measured. These devices are attractive candidates to use in uncooled silicon photonic transceivers in data centers. (C) 2018 Optical Society of America under the terms of the OSA Open Access Publishing Agreement

引用

页码：18302 / 18309

页数：8

共 7 条

[1] 1.3-μm InAs/GaAs quantum-dot lasers monolithically grown on Si substrates
Wang, Ting
Liu, Huiyun
Lee, Andrew
Pozzi, Francesca
Seeds, Alwyn
OPTICS EXPRESS, 2011, 19 (12): : 11381 - 11386
[2] Fabrication of electrically pumped InAs/GaAs quantum dot lasers on Si substrates by Au-mediated wafer bonding
Tanabe, Katsuaki
Guimard, Denis
Bordel, Damien
Iwamoto, Satoshi
Arakawa, Yasuhiko
PHYSICA STATUS SOLIDI C: CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 8, NO 2, 2011, 8 (02): : 319 - 321
[3] Temperature-Independent Performance of an 8-Layer λ ∼1.3 μm InAs/GaAs Quantum-Dot Laser
Gupta, Nitika
Yelashetty, Arvind
Sharma, Abhishek
Jain, Alok
Gopinathan, Unnikrishnan
Dhirhe, Devnath
JOURNAL OF RUSSIAN LASER RESEARCH, 2020, 41 (01) : 86 - 93
[4] 1.3-μm InAs/GaAs quantum-dot lasers monolithically grown on Si substrates using InAlAs/GaAs dislocation filter layers
Tang, Mingchu
Chen, Siming
Wu, Jiang
Jiang, Qi
Dorogan, Vitaliy G.
Benamara, Mourad
Mazur, Yuriy I.
Salamo, Gregory J.
Seeds, Alwyn
Liu, Huiyun
OPTICS EXPRESS, 2014, 22 (10): : 11528 - 11535
[5] Optimizations of Defect Filter Layers for 1.3-μm InAs/GaAs Quantum-Dot Lasers Monolithically Grown on Si Substrates
Tang, Mingchu
Chen, Siming
Wu, Jiang
Jiang, Qi
Kennedy, Ken
Jurczak, Pamela
Liao, Mengya
Beanland, Richard
Seeds, Alwyn
Liu, Huiyun
IEEE JOURNAL OF SELECTED TOPICS IN QUANTUM ELECTRONICS, 2016, 22 (06) : 50 - 56
[6] Electrically pumped continuous-wave 1.3 μm InAs/GaAs quantum dot lasers monolithically grown on on-axis Si (001) substrates
Chen, Siming
Liao, Mengya
Tang, Mingchu
Wu, Jiang
Martin, Mickael
Baron, Thierry
Seeds, Alwyn
Liu, Huiyun
OPTICS EXPRESS, 2017, 25 (05): : 4632 - 4639
[7] 1.3 μm InAs/GaAs quantum-dot lasers grown on planar on-axis Si (001) substrates with high slope-efficiency and low differential resistance
Lin, Feng
Wang, Jun
Zhai, Hao
Liu, Shuaicheng
Ge, Qing
Chen, Yanan
Liu, Chuanjiang
Mao, Kaize
Liu, Hao
Bai, Yiming
Wang, Qi
Huang, Yongqing
Ren, Xiaomin
LASER PHYSICS LETTERS, 2024, 21 (05)

← 1 →