Ion beam analysis of copper selenide thin films prepared by chemical bath deposition

被引：11

作者：

Andrade, E ^{[1
]}

García, VM

Nair, PK

Nair, MTS

Zavala, EP

Huerta, L

Rocha, MF

机构：

[1] Univ Nacl Autonoma Mexico, Inst Fis, Apartado Postal 20-364, Mexico City 01000, DF, Mexico

[2] Univ Autonoma Zacatecas, Fac Ciencias Quim, Zacatecas 98600, Zacatecas, Mexico

[3] Univ Nacl Autonoma Mexico, Inst Politecn Nacl, Escuela Super Ingn Mecan Elect, Mexico City 07738, DF, Mexico

来源：

NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS | 2000年 / 161卷

关键词：

IBA techniques; chemical composition; X-ray diffractometry; thin film growth; chemical deposition;

D O I：

10.1016/S0168-583X(99)00994-5

中图分类号：

TH7 [仪器、仪表];

学科分类号：

0804 ; 080401 ; 081102 ;

摘要：

Analyses of Rutherford back scattered (RBS) He-4(+)-particle spectra of copper selenide thin films deposited on glass slides by chemical bath were carried out to determine the changes brought about in the thin him by annealing processes. The atomic density per unit area and composition of the films were obtained from these measurements. This analysis shows that annealing in a nitrogen atmosphere at 400 degrees C leads to the conversion of CuxSe thin film to Cu2Se. Results of X-ray diffraction, optical, and electrical characteristics on the films are presented to supplement the RBS results. (C) 2000 Elsevier Science B.V. All rights reserved.

引用

页码：635 / 640

页数：6

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