Resonant tunneling through a self-assembled Si quantum dot

被引：92

作者：

Fukuda, M

Nakagawa, K

Miyazaki, S

Hirose, M

机构：

[1] Department of Electrical Engineering, Hiroshima University, Higashi-Hiroshima 739

来源：

APPLIED PHYSICS LETTERS | 1997年 / 70卷 / 17期

关键词：

D O I：

10.1063/1.118816

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Nanometer-scale Si quantum dots have been spontaneously fabricated on SiO2 by controlling the early stages of low-pressure chemical vapor deposition from pure silane. The tunneling current through Au/l nm-SiO2/a single Si quantum dot/l nm-SiO2/n(+)-Si(100) double-barrier structures has exhibited the clear current bump or negative conductance at 300 K with a peak current to valley ratio as high as 10. (C) 1997 American Institute of Physics.

引用

页码：2291 / 2293

页数：3

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