Efficient intensity modulation due to surface acoustic waves on windows of the AlGaN/InGaN multiple quantum well laser

被引：0
|
作者：
Abrarov, SM
Kang, TW
Kim, TW
机构：
[1] Dongguk Univ, Quantum Funct Semicond Res Ctr, Seoul 100715, South Korea
[2] Hanyang Univ, Div Elect & Comp Engn, Adv Semicond Res Ctr, Seoul 133791, South Korea
来源：
OPTICS AND LASER TECHNOLOGY | 2004年 / 36卷 / 07期
关键词：
laser diode; intensity modulation; antireflection coating; surface acoustic waves;
D O I：
10.1016/j.optlastec.2004.01.005
中图分类号：
O43 [光学];
学科分类号：
070207 ; 0803 ;
摘要：
An alternative method for modulation of light generated by AlGaN/InGaN multiple quantum well laser with quartz antireflective (AR) coatings covering the resonator windows was modelled and studied theoretically. Disturbance of the piezoelectric coatings caused by surface acoustic waves (SAW) results in efficient intensity modulation of the laser beam. The model for the laser diode operating at DC demonstrates that the modulation factor can exceed 0.2 in sub-nanometer SAW displacement. For quarter-wave AR films, the carrier frequency of modulated beam has twice the frequency of SAW. (C) 2004 Elsevier Ltd. All rights reserved.
引用
收藏
页码：595 / 600
页数：6
相关论文
共 50 条
  • [41] Poor hole injection into the active layer in an InGaN/GaN/AlGaN multi-quantum well laser diode
    Domen, K
    Soejima, R
    Kuramata, A
    Horino, K
    Kubota, S
    Tanahashi, T
    BLUE LASER AND LIGHT EMITTING DIODES II, 1998, : 405 - 408
  • [42] Pulsed electron-beam-pumped laser based on AlGaN/InGaN/GaN quantum-well heterostructure
    Gamov, N. A.
    Zhdanova, E. V.
    Zverev, M. M.
    Peregoudov, D. V.
    Studenov, V. B.
    Mazalov, A. V.
    Kureshov, V. A.
    Sabitov, D. R.
    Padalitsa, A. A.
    Marmalyuk, A. A.
    QUANTUM ELECTRONICS, 2015, 45 (07) : 601 - 603
  • [43] Strong ultraviolet emission from InGaN/AlGaN multiple quantum well grown by multi-step process
    Chen, Hou-Guang
    Hsu, Nai-Fang
    Chu, Jung-Tang
    Yao, Hsin-Hung
    Lu, Tien-Chang
    Kuo, Hao-Chung
    Wang, Shing-Chung
    Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers, 2007, 46 (4 B): : 2574 - 2577
  • [44] Strong ultraviolet emission from InGaN/AlGaN multiple quantum well grown by multi-step process
    Chen, Hou-Guang
    Hsu, Nai-Fang
    Chu, Jung-Tang
    Yao, Hsin-Hung
    Lu, Tien-Chang
    Kuo, Hao-Chung
    Wang, Shing-Chung
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, 2007, 46 (4B): : 2574 - 2577
  • [45] Photoluminescence of InGaN/GaN and AlGaN/GaN multiple quantum well structures: role of depletion fields and polarization fields
    Monemar, B
    Paskov, PP
    Haratizadeh, H
    Holtz, PO
    Bergman, JP
    Kamiyama, S
    Iwaya, M
    Amano, H
    Akasaki, I
    PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 2003, 195 (03): : 523 - 527
  • [46] Demonstration of an ultraviolet 336 nm AlGaN multiple-quantum-well laser diode
    Yoshida, Harumasa
    Yamashita, Yoji
    Kuwabara, Masakazu
    Kan, Hirofumi
    APPLIED PHYSICS LETTERS, 2008, 93 (24)
  • [47] A 342-nm ultraviolet AlGaN multiple-quantum-well laser diode
    Harumasa Yoshida
    Yoji Yamashita
    Masakazu Kuwabara
    Hirofumi Kan
    Nature Photonics, 2008, 2 : 551 - 554
  • [48] A 342-nm ultraviolet AlGaN multiple-quantum-well laser diode
    Yoshida, Harumasa
    Yamashita, Yoji
    Kuwabara, Masakazu
    Kan, Hirofumi
    NATURE PHOTONICS, 2008, 2 (09) : 551 - 554
  • [49] InGaN/AlGaN near-ultraviolet multiple quantum well light-emitting diodes with p-InGaN tunneling contact layer
    Chen, CH
    Chang, SJ
    Su, YK
    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A, 2004, 22 (03): : 1020 - 1022
  • [50] Photoluminescence in GaAs-based quantum well structures with surface acoustic waves
    Santos, PV
    Ramsteiner, M
    Jungnickel, F
    Hey, R
    PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1999, 173 (01): : 269 - 273
12345