Characterization of defects in n-type 4H-SiC after high-energy N ion implantation by RBS-channeling and Raman spectroscopy

被引：3
|
作者：
Kummari, Venkata C. [1 ]
Reinert, Tilo [1 ]
Jiang, Weilin [2 ]
McDaniel, Floyd D. [1 ]
Rout, Bibhudutta [1 ,3 ]
机构：
[1] Univ N Texas, Ion Beam Modificat & Anal Lab, Dept Phys, Denton, TX 76203 USA
[2] Pacific NW Natl Lab, Richland, WA 99352 USA
[3] Univ N Texas, Ctr Adv Res & Technol, Denton, TX 76207 USA
来源：
NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS | 2014年 / 332卷
基金：
美国国家科学基金会;
关键词：
n-Type; 4H-SiC; Ion implantation; RBS; Channeling; Raman spectroscopy; NITROGEN IMPLANTATION;
D O I：
10.1016/j.nimb.2014.02.023
中图分类号：
TH7 [仪器、仪表];
学科分类号：
0804 ; 080401 ; 081102 ;
摘要：
Implantation with 1 MeV N ions was performed at room temperature in n-type 4H-SiC (0 0 0 1) at four implantation fluences (or doses in dpa (displacements per atom) at the damage peak) of 1.5 x 10(13) (0.0034), 7.8 x 10(13) (0.018), 1.5 x 10(14) (0.034), and 7.8 x 10(14) (0.178) ions/cm(2), respectively. The evolution of disorder was studied using Rutherford backscattering spectrometry in channeling mode (RBS-C), Raman spectroscopy, and optical transmission. The disorder in the Si sub-lattice was found to be less than 10% for the dpa of 0.0034 and 0.0178 and increased to 40% and 60% for the dpa of 0.034 and 0.178 respectively. The normalized Raman intensity I-n, shows disorder of 41%, 69%, 77% and 100% for the dpa of 0.0034, 0.0178, 0.034 and 0.178, respectively. In this paper, the characterization of the defects produced due to the nitrogen implantation in 4H-SiC are presented and the results are discussed. (C) 2014 Elsevier B.V. All rights reserved.
引用
收藏
页码：28 / 32
页数：5
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