Deposition of Ti:sapphire thin films by reactive pulsed laser ablation using liquid metals and oxygen

被引：8
|
作者：
Manoravi, P
Willmott, PR
Huber, JR
Greber, T
机构：
[1] Univ Zurich, Inst Phys Chem, CH-8057 Zurich, Switzerland
[2] Univ Zurich, Inst Phys, CH-8057 Zurich, Switzerland
来源：
APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING | 1999年 / 69卷 / Suppl 1期
关键词：
D O I：
10.1007/s003390051548
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
Ti:sapphire films were grown using molten Al-Ti alloy ablation targets with either O-2 gas pulses or O-2 background reactive medium on sapphire (0001) substrates. The films were characterized by the use of XRD, RHEED, AFM, and XPS. While the films deposited at a substrate temperature of 650 degrees C showed three-dimensional epitaxial growth, the films deposited at 1000 degrees C exhibited a two-dimensional structure. Annealing of the low-temperature deposited films improved the crystal quality but failed to improve the surface morphology. Ti exists in the host sapphire lattice in the form of Ti3+ for films deposited at lower temperatures, whereas it assumes the tetravalent form in the high-temperature deposited films. The valence states of Ti identified by XPS studies are in agreement with low-temperature luminescence results.
引用
收藏
页码：S865 / S867
页数：3
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