Preliminary single event effect distribution investigation on 28 nm SoC using heavy ion microbeam

被引：10

作者：

Yang, Weitao ^{[1
]}

Du, Xuecheng ^{[1
]}

Guo, Jinlong ^{[2
]}

Wei, Junze ^{[2
]}

Du, Guanghua ^{[2
]}

He, Chaohui ^{[1
]}

Liu, Wenjing ^{[2
]}

Shen, Shuaishuai ^{[1
]}

Huang, Chengliang ^{[1
]}

Li, Yonghong ^{[1
]}

Fan, Yunyun ^{[1
]}

机构：

[1] Xi An Jiao Tong Univ, Sch Nucl Sci & Technol, Xian, Shaanxi, Peoples R China

[2] Chinese Acad Sci, Inst Modern Phys, Lanzhou, Gansu, Peoples R China

来源：

NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS | 2019年 / 450卷

基金：

中国国家自然科学基金;

关键词：

Single event effect (SEE); System on Chip (SoC); Heavy ion microbeam; On-chip-memory (OCM); XILINX 28-NM SYSTEM; DESIGN; UPSET;

D O I：

10.1016/j.nimb.2018.09.038

中图分类号：

TH7 [仪器、仪表];

学科分类号：

0804 ; 080401 ; 081102 ;

摘要：

The SEE susceptibility on 28 nm Xilinx Zynq-7020 All Programmable SoC was investigated at heavy ion microbeam facilities in Institute of Modem Physics (IMP). The sensitive SEE spots distribution in entire PS area was obtained by running the on chip memory (OCM) test program. The extracted chip bottom modules layout information indicated that the SEE sensitive events occurred in the OCM area, central data processing area, and interfaces controlling buffer registers elements area, accounting for 19.6%, 32.6% and 47.8%, respectively. The results showed it was possible that the SEE events in other areas appeared more serious than in the target block located area. Meanwhile, the partial cross section was gotten in the test and it was (5.75 +/- 0.85) x 10(-5) cm(2).

引用

页码：323 / 326

页数：4

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