Silicon piezoresistive cantilever beam with porous silicon element

被引：0

作者：

Domanski, K ^{[1
]}

Tomaszewski, D ^{[1
]}

Grabiec, P ^{[1
]}

Gniazdowski, Z ^{[1
]}

Kudla, A ^{[1
]}

Beck, RB ^{[1
]}

Jakubowski, A ^{[1
]}

Gotszalk, T ^{[1
]}

Rangelow, IW ^{[1
]}

机构：

[1] Inst Electr Mat Technol, PL-02668 Warsaw, Poland

来源：

PROCEEDINGS OF THE ELEVENTH INTERNATIONAL WORKSHOP ON THE PHYSICS OF SEMICONDUCTOR DEVICES, VOL 1 & 2 | 2002年 / 4746卷

关键词：

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We present a highly sensitive nanobalance based on a piezoresistive cantilever beam with porous silicon element. Measurements of a shift of the cantilever resonance frequency allow estimation of adsorbed substance weight (e.g. gas, steam) with single nanogram resolution. Applications of such a device include humidity and gas detection. Besides, cantilever beam with porous silicon element enables combined investigations of mechanical and adsorption properties of porous silicon.

引用

页码：523 / 526

页数：4

共 6 条

[1] ADSORPTION-INDUCED SURFACE STRESS AND ITS EFFECTS ON RESONANCE FREQUENCY OF MICROCANTILEVERS [J].