Design and characterization of methoxy modified organic semiconductors based on phenyl[1] benzothieno[3,2-b][1]benzothiophene

被引：17
|
作者：
Yao, Chao [1 ]
Chen, Xiaolong [1 ]
He, Yaowu [1 ]
Guo, Yitong [1 ]
Murtaza, Imran [2 ,3 ]
Meng, Hong [1 ,2 ]
机构：
[1] Peking Univ, Shenzhen Grad Sch, Sch Adv Mat, Shenzhen 518055, Peoples R China
[2] Nanjing Tech Univ, Inst Adv Mat, Nanjing 211816, Jiangsu, Peoples R China
[3] Int Islamic Univ, Dept Phys, Islamabad 44000, Pakistan
来源：
RSC ADVANCES | 2017年 / 7卷 / 09期
基金：
中国博士后科学基金; 中国国家自然科学基金;
关键词：
FIELD-EFFECT TRANSISTORS; DERIVATIVES;
D O I：
10.1039/c6ra28074a
中图分类号：
O6 [化学];
学科分类号：
0703 ;
摘要：
Two environmentally and thermally stable [1] benzothieno[3,2-b][1] benzothiophene (BTBT) derivatives, BOP-BTBT and DBOP-BTBT are successfully synthesized and analyzed as active layers in organic thin film transistors. The effects of methoxy on BTBT based OTFT materials are reported for the first time. The experimental results show an excellent optimization influence of methoxy group on the OTFT performance with an improved hole transport mobility up to 0.63 cm(2) V-1 s(-1) (BOP-BTBT) and 3.57 cm(2) V-1 s(-1) (DBOP-BTBT). Meantime the mono-and bis-substituted derivatives are compared in terms of their physical properties and device performance. We find that the threshold voltage decreases when more methoxy groups are introduced.
引用
收藏
页码：5514 / 5518
页数：5
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