Optical Gain in Er Doped GaN Multiple Quantum Wells

被引：0
作者：
Ho, Vinh X.
Ryan, Brendan
Cui, Jiarong R.
Pradhan, Prashant
Vinh, Nguyen Q. [1 ]
机构：
[1] Virginia Tech, Dept Phys, Blacksburg, VA 24061 USA
来源：
NANOENGINEERING: FABRICATION, PROPERTIES, OPTICS, THIN FILMS, AND DEVICES XVII | 2020年 / 11467卷
基金：
美国国家科学基金会;
关键词：
Infrared laser; Silicon; GaN; Rare earth; Quantum wells; Lasing; MU-M; ERBIUM;
D O I：
10.1117/12.2567850
中图分类号：
TB3 [工程材料学];
学科分类号：
0805 ; 080502 ;
摘要：
We report the realization of lasing in Er-doped GaN multiple quantum wells in the technologically crucial 1.54-mu m wavelength at room temperature. We have obtained optical gain in the multiple quantum well structure by using a variable stripe technique. The stimulated emission from the material has been revealed from the characteristic threshold behavior of spectral linewidth narrowing, and the emission intensity as a function of pump fluence.
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页数：5
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共 21 条
[1]   Dramatic enhancement of 1.54 μm emission in Er doped GaN quantum well structures [J].
Al Tahtamouni, T. M. ;
Stachowicz, M. ;
Li, J. ;
Lin, J. Y. ;
Jiang, H. X. .
APPLIED PHYSICS LETTERS, 2015, 106 (12)
[2]   Role of the interface region on the optoelectronic properties of silicon nanocrystals embedded in SiO2 -: art. no. 085327 [J].
Daldosso, N ;
Luppi, M ;
Ossicini, S ;
Degoli, E ;
Magri, R ;
Dalba, G ;
Fornasini, P ;
Grisenti, R ;
Rocca, F ;
Pavesi, L ;
Boninelli, S ;
Priolo, F ;
Spinella, C ;
Iacona, F .
PHYSICAL REVIEW B, 2003, 68 (08)
[3]   LUMINESCENCE OF ERBIUM IMPLANTED IN VARIOUS SEMICONDUCTORS - IV-MATERIALS, III-V-MATERIALS AND II-VI MATERIALS [J].
FAVENNEC, PN ;
LHARIDON, H ;
SALVI, M ;
MOUTONNET, D ;
LEGUILLOU, Y .
ELECTRONICS LETTERS, 1989, 25 (11) :718-719
[4]   Elastocapillary powered manipulation of liquid plug in microchannels [J].
George, D. ;
Anoop, R. ;
Sen, A. K. .
APPLIED PHYSICS LETTERS, 2015, 107 (26)
[5]   Optical gain at 1.54 μm in erbium-doped silicon nanocluster sensitized waveguide [J].
Han, HS ;
Seo, SY ;
Shin, JH .
APPLIED PHYSICS LETTERS, 2001, 79 (27) :4568-4570
[6]   Observation of optical gain in Er-Doped GaN epilayers [J].
Ho, V. X. ;
Wang, Y. ;
Ryan, B. ;
Patrick, L. ;
Jiang, H. X. ;
Lin, J. Y. ;
Vinh, N. Q. .
JOURNAL OF LUMINESCENCE, 2020, 221
[7]   Room-Temperature Lasing Action in GaN Quantum Wells in the Infrared 1.5 μm Region [J].
Ho, V. X. ;
Al Tahtamouni, T. M. ;
Jiang, H. X. ;
Lin, J. Y. ;
Zavada, J. M. ;
Vinh, N. Q. .
ACS PHOTONICS, 2018, 5 (04) :1303-1309
[8]   Photoluminescence quantum efficiency of Er optical centers in GaN epilayers [J].
Ho, V. X. ;
Dao, T. V. ;
Jiang, H. X. ;
Lin, J. Y. ;
Zavada, J. M. ;
McGill, S. A. ;
Vinh, N. Q. .
SCIENTIFIC REPORTS, 2017, 7
[9]   Donor-state-enabling er-related luminescence in silicon: Direct identification and resonant excitation [J].
Izeddin, I. ;
Klik, M. A. J. ;
Vinh, N. Q. ;
Bresler, M. S. ;
Gregorkiewicz, T. .
PHYSICAL REVIEW LETTERS, 2007, 99 (07)
[10]   Erbium in silicon [J].
Kenyon, AJ .
SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 2005, 20 (12) :R65-R84
123