An EMI suppression MOSFET driver

被引：0
|
作者：
Yee, HP
机构：
来源：
APEC '97 - TWELFTH ANNUAL APPLIED POWER ELECTRONICS CONFERENCE AND EXPOSITION, VOLS 1 AND 2 | 1997年
关键词：
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
The MOSFET's dV(drain)/dt during turn OFF is sensed by the EMI suppression driver circuit, which selectively adjust the Vgs transition time at a voltage near the MOSFET's threshold voltage. This technique controls the dV(drain)/dt and reduces the EMI noise produced by a hard switching power MOSFET while keep its power loss at a minimum.
引用
收藏
页码：242 / 248
页数：7
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