The Effect of Phosphate Buffer Solution (PBS) Concentration on the Ion Sensitive Field-Effect Transistor (ISFET) Detection

被引：0

作者：

Weng, Chong Soon ^{[1
]}

Hashim, U. ^{[1
]}

Liu, Wei-Wen ^{[1
]}

机构：

[1] Univ Malaysia Perlis, INEE, Kangar 01000, Perlis, Malaysia

来源：

2013 IEEE REGIONAL SYMPOSIUM ON MICRO AND NANOELECTRONICS (RSM 2013) | 2013年

关键词：

concentration; PBS; ISFET; sensitivity;

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The effect of varying concentration of the phosphate buffer solution (PBS) on the ion sensitive field-effect transistor (ISFET) was studied. 5 mu L of PBS solution was mixed in 20,30,40,50 and 60 mu L of deionized water (DI water) and tested with ISFET. The results show that the drain current of the ISFET decreases with the decreasing value of PBS solution concentration. The ISFET device tested has a sensitivity of 43.13mV/pH.

引用

页码：200 / 203

页数：4

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