Spin-Wave Resonance Model of Surface Pinning in Ferromagnetic Semiconductor (Ga,Mn)As Thin Films

被引：13

作者：

Puszkarski, H. ^{[1
]}

Tomczak, P. ^{[2
]}

机构：

[1] Adam Mickiewicz Univ, Fac Phys, Surface Phys Div, PL-61614 Poznan, Poland

[2] Adam Mickiewicz Univ, Fac Phys, Quantum Phys Div, PL-61614 Poznan, Poland

来源：

SCIENTIFIC REPORTS | 2014年 / 4卷

关键词：

GA1-XMNXAS; DEPENDENCE; ANISOTROPY; PARAMETER;

D O I：

10.1038/srep06135

中图分类号：

O [数理科学和化学]; P [天文学、地球科学]; Q [生物科学]; N [自然科学总论];

学科分类号：

07 ; 0710 ; 09 ;

摘要：

The source of spin-wave resonance (SWR) in thin films of the ferromagnetic semiconductor (Ga,Mn)As is still under debate: does SWR stem from the surface anisotropy (in which case the surface inhomogeneity (SI) model would apply), or does it originate in the bulk inhomogeneity of the magnetic structure of the sample (and thus requires the use of the volume inhomogeneity (VI) model)? This paper outlines the ground on which the controversy arose and shows why in different conditions a resonance sample may meet the assumptions of either the SI or the VI model.

引用

页数：9

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