Synthesis of Bi3+ and Gd3+ doped ZnB2O4 for evaluation as potential materials in luminescent display applications

被引:27
作者
Mu, Zhongfei [1 ,2 ]
Hu, Yihua [2 ]
Chen, Li [2 ]
Wang, Xiaojuan [2 ]
Chen, Ren [2 ]
Wang, Tao [2 ]
Fu, Yinrong [2 ]
Xu, Jinxuan [2 ]
机构
[1] Guangdong Univ Technol, Expt Teaching Dept, Guangzhou 510006, Guangdong, Peoples R China
[2] Guangdong Univ Technol, Sch Phys & Optoelect Engn, Guangzhou 510006, Guangdong, Peoples R China
关键词
ZnB2O4; Bi3+; Gd3+; Host absorption; MICROWAVE DIELECTRIC-PROPERTIES; ENERGY-TRANSFER; THERMOLUMINESCENCE; PHOTOLUMINESCENCE; CRYSTALLIZATION; CERAMICS; Y3AL5O12; TB3+;
D O I
10.1016/j.displa.2014.04.003
中图分类号
TP3 [计算技术、计算机技术];
学科分类号
0812 ;
摘要
A series of Bi3+ and Gd3+ doped ZnB2O4 phosphors were synthesized with solid state reaction technique. X-ray diffraction technique was employed to study the structure of prepared samples. Excitation and emission spectra were recorded to investigate the luminescence properties of phosphors. The doping of Bi3+ or Gd3+ with a small amount (no more than 3 mol%) does not change the structure of prepared samples remarkably. Bi3+ in ZnB2O4 can emit intense broad-band purplish blue light peaking at 428 nm under the excitation of a broad-band peaking at 329 nm. The optimal doping concentration of Bi3+ is experimentally ascertained to be 0.5 mol%. The decay time of Bi3+ in ZnB2O4 changes from 0.88 to 1.69 ms. Gd3+ in ZnB2O4 can be excited with 254 nm ultraviolet light and yield intense 312 nm emission. The optimal doping concentration of Gd3+ is experimentally ascertained to be 5 mol%. The decay time of Gd3+ in ZnB2O4 changes from 0.42 to 1.36 ms. (C) 2014 Elsevier B.V. All rights reserved.
引用
收藏
页码:147 / 151
页数:5
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