High performance 1.3 mu m GaInAsP/InP tensile-strained quantum well lasers

被引：1
|
作者：
Yokouchi, N
Kasukawa, A
机构：
来源：
IN-PLANE SEMICONDUCTOR LASERS: FROM ULTRAVIOLET TO MIDINFRARED | 1997年 / 3001卷
关键词：
GaInAsP/InP; lasers; strained quantum wells; MOCVD;
D O I：
10.1117/12.273808
中图分类号：
O43 [光学];
学科分类号：
070207 ; 0803 ;
摘要：
Tensile-strained GaInAsP/InP quantum well (QW) lasers emitting at 1.3 mu m are investigated. By introducing tensile-strained QW as an active region, low threshold current operation with good temperature characteristic are obtained. The lowest threshold current of 1.0mA was achieved in a triple QW laser. Enhanced differential gain shows the feasibility of high speed operation. We also verified long-term reliability of similar to 10(5) hours at 85 degrees C, 10mW condition.
引用
收藏
页码：378 / 381
页数：4
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