Morphological and optical characterization of GaN/AlN heterostructures grown on Si(111) substrates by MBE

被引:0
作者
Rinaldi, R
Antonaci, S
Anni, M
Lomascolo, M
Cingolani, R
Botchkarev, A
Morkoc, H
机构
[1] Univ Lecce, INFM, I-73100 Lecce, Italy
[2] Univ Lecce, Dipartimento Ing Innovaz, I-73100 Lecce, Italy
[3] Virginia Commonwealth Univ, Dept Elect Engn, Richmond, VA USA
[4] Virginia Commonwealth Univ, Dept Phys, Richmond, VA USA
来源
PHYSICA STATUS SOLIDI B-BASIC RESEARCH | 1999年 / 216卷 / 01期
关键词
D O I
10.1002/(SICI)1521-3951(199911)216:1<701::AID-PSSB701>3.3.CO;2-V
中图分类号
O469 [凝聚态物理学];
学科分类号
070205 ;
摘要
We report an investigation of wurtzite GaN/AlN heterostructures grown on Si(111) substrates by MBE, based on scanning tunneling microscopy measurements in air and photoluminescence. The scanning tunneling microscopy analysis of the sample surfaces demonstrates that the morphology of the GaN layers depends strongly on the thickness of the thin AlN buffer layer and has a weaker dependence on the substrate temperature during growth. GaN layers grown directly on the Si substrate or on a thin (<10 nm) AlN buffer layer present surface defects that can be associated with the formation of screw dislocations with their axis parallel to the growth direction. The photoluminescence spectra show strong extrinsic emission lines for all the investigated samples.
引用
收藏
页码:701 / 706
页数:6
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