Correlation between internal stress and ferroelectric fatigue in Bi4-xLaxTi3O12 thin films

被引:97
|
作者
Lee, JK [1 ]
Kim, CH [1 ]
Suh, HS [1 ]
Hong, KS [1 ]
机构
[1] Seoul Natl Univ, Seoul 151742, South Korea
关键词
D O I
10.1063/1.1477272
中图分类号
O59 [应用物理学];
学科分类号
摘要
La-substituted bismuth titanate [Bi4-xLaxTi3O12(BLT)] films were synthesized using pulsed-laser deposition and ferroelectric fatigue phenomenon was investigated. The internal strain present in the films, which was analyzed through the evaluation of the x-ray diffraction peak, was partially responsible for the fatigue in BLT films. When xgreater than or equal to0.75, the change in the internal strain was saturated and there was no significant degradation of switching charge, at least up to 10(10) cycles. It revealed that the internal strain, as well as chemical stability of oxygen ions, contributed to the ferroelectric fatigue of the BLT films. The origin of the internal strain is discussed in terms of the lattice mismatch between bulk materials and thin films. (C) 2002 American Institute of Physics.
引用
收藏
页码:3593 / 3595
页数:3
相关论文
共 50 条
  • [41] Surface kinetics of Bi4-xLaxTi3O12 films etched in a CF4/Ar gas chemistry
    Kim, DP
    Kim, KT
    Efremov, AM
    Kim, CI
    JOURNAL OF THE KOREAN PHYSICAL SOCIETY, 2004, 44 (01) : 1 - 5
  • [42] Preferred crystal orientation of sol-gel derived Bi4-xLaxTi3O12 thin-films on silicon substrates
    Tajiri, Takayuki
    Sumitani, Kazushi
    Haruki, Rie
    Kohno, Atsushi
    2007 SIXTEENTH IEEE INTERNATIONAL SYMPOSIUM ON THE APPLICATIONS OF FERROELECTRICS, VOLS 1 AND 2, 2007, : 119 - +
  • [43] Dielectric properties of Bi4-xLaxTi3O12 (0 ≤ x ≤ 2) ceramics
    Hou, RZ
    Chen, XM
    JOURNAL OF ELECTROCERAMICS, 2003, 10 (03) : 203 - 207
  • [44] Degradation mechanism of ferroelectric properties in Pt/Bi4-xLaxTi3O12/Pt capacitors during forming gas annealing
    Chon, U
    Kim, KB
    Jang, HM
    APPLIED PHYSICS LETTERS, 2001, 79 (15) : 2450 - 2452
  • [45] Deposition of Bi4-xLaxTi3O12 films by direct liquid injection-metalorganic chemical vapor deposition
    Kang, SW
    Rhee, SW
    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A, 2003, 21 (01): : 340 - 343
  • [46] Ferroelectric properties of sol-gel derived Bi4-xLaxTi3O12 films prepared on Pt/Ti/SiO2/Si substrate
    Park, S. M.
    Back, J. H.
    Pak, J. M.
    Nam, K. W.
    Seo, C. W.
    Cheong, H. S.
    Park, Gwangseo
    2007 SIXTEENTH IEEE INTERNATIONAL SYMPOSIUM ON THE APPLICATIONS OF FERROELECTRICS, VOLS 1 AND 2, 2007, : 130 - 133
  • [47] PHYSICAL PROPERTIES OF FERROELECTRIC BI4-xLAxTI3O12 NANO-PARTICLES SYNTHESIZED BY THE CHEMICAL CO-PRECIPITATION METHOD
    Islam, M. S.
    Kano, J.
    Shikanai, F.
    Kojima, S.
    INTEGRATED FERROELECTRICS, 2008, 100 : 146 - 155
  • [48] Etching mechanism of Bi4-xLaxTi3O12 films in Ar/Cl2 inductively coupled plasma
    Kim, DP
    Kim, KT
    Kim, CI
    Efremov, AM
    THIN SOLID FILMS, 2004, 447 : 343 - 348
  • [49] In situ Raman spectroscopy observation of crystallization process of sol-gel derived Bi4-xLaxTi3O12 films
    Sugita, N
    Tokumitsu, E
    Osada, M
    Kakihana, M
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 2003, 42 (8A): : L944 - L945
  • [50] Leakage current suppression of Pt/Bi4-xLaxTi3O12/Ru capacitors by post-annealing of Ru films
    Furukawa, T
    Kuroiwa, T
    Fujisaki, K
    Sato, T
    Ishiwara, H
    INTEGRATED FERROELECTRICS, 2004, 62 : 171 - 176