Correlation between internal stress and ferroelectric fatigue in Bi4-xLaxTi3O12 thin films

被引：97

作者：

Lee, JK ^{[1
]}

Kim, CH ^{[1
]}

Suh, HS ^{[1
]}

Hong, KS ^{[1
]}

机构：

[1] Seoul Natl Univ, Seoul 151742, South Korea

来源：

APPLIED PHYSICS LETTERS | 2002年 / 80卷 / 19期

关键词：

D O I：

10.1063/1.1477272

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

La-substituted bismuth titanate [Bi4-xLaxTi3O12(BLT)] films were synthesized using pulsed-laser deposition and ferroelectric fatigue phenomenon was investigated. The internal strain present in the films, which was analyzed through the evaluation of the x-ray diffraction peak, was partially responsible for the fatigue in BLT films. When xgreater than or equal to0.75, the change in the internal strain was saturated and there was no significant degradation of switching charge, at least up to 10(10) cycles. It revealed that the internal strain, as well as chemical stability of oxygen ions, contributed to the ferroelectric fatigue of the BLT films. The origin of the internal strain is discussed in terms of the lattice mismatch between bulk materials and thin films. (C) 2002 American Institute of Physics.

引用

页码：3593 / 3595

页数：3